Application of independent-channel method for investigation of electrical conductivity of graphene-containing shungite.

The independent channel method which is intended for the calculation of specific electrical conductivity of graphene-contained shungite is proposed and realized on practice. It is noted that the most important of shungite application is the creation of screen hawing large area which are able to block electromagnetic radiation in wide frequency range. The most important factor which determines the blocking properties of shungite is the specific electrical conductivity of its carbon part which is determined by the spatial distribution of carbon atoms. As a main method of carbon structure investigation is mentioned the high-resolution raster electron microscopy which allows from the surface of specimen to receive the card of distribution of graphene slides and graphene packets. The spatial factor which determines the shungite conductivity is large anisotropy of single graphene slide which reaches three orders and more in the cases along and across the slide. The proposed method independent channels takes into consideration the arbitrary orientation of graphene packets relatively to direction of current flow. As a basis of method is employing the card of carbon spatial distribution which is received by raster electron microscopy method. The card is divided by parallel channels which transverse dimension is near or slightly exceeds the typical dimension of graphene packet. The channels are divided to square blocks which sides are equal to width of channel. The whole resistance of channel is formed by the successive connection of individual resistances of blocks. The resistance of whole card is determined by parallel connection of channels or averaging of resistance of all channels and following filling the whole area of card. The first step of analysis is the determination of advantage orientation of slides inside of every blocks. On the basis of determined orientation the block is filled by periodic structure which period is equal to the width of graphene slide and neighbouring interval. As a parameter which determines the orientation is used the angle between advantage orientation of graphene slides and axis of current flow between contacts. Owing to symmetry of task in comparison of current direction the limited meanings of corner is 0 and 90 degree. It is established two principal different cases of orientation: first – when determining angle is less than 45 degree and second when this angle is more than 45 degree. In the first case the current flows along the stripe with large conductivity. In the second case the current flows across these stripes so as through the stripes with low conductivity. It is found the smooth dependence of block resistivity from the angle of strip orientation. For the characteristic of area which is filled graphene slides it is proposed the coefficient of filling which is determined by binary discretization method. On the basis of analysis of slides orientation and filling coefficients are calculated the resistance of individual blocks. The resistances of all channels of investigated card are proposed. By using two methods – parallel connection and averaging over all channels it is calculated the specific electrical resistance and specific electrical conductivity of material as a whole. It is found that the received values of specific conductivity exceed the determined in experiment value in several (to 10) times. For the coordination of calculated value with experimental value it is made the variation of specific resistances of graphene slides and intervals between its. It id found that the calculation by method of parallel connection of channels ensures several better coordination than method of averaging. It is shown that the resistance is improved in the first turn by the increasing the resistance of interval between slides. In the quality of possible reason of decisive role of interval it is proposed the observed in experiment sharp non-homogeneity of relative arrangement of graphene slides. It is discussed the possible courses of further development of work. As a most important task it is proposed the more circumstantial determination of statistical character of received results.

INFLUENCE OF TIME MODES OF THERMAL TREATMENT ON Pt-Si SYSTEM MICROSTRUCTURE

The paper is purposed to establish the principles of the micro-structural changes of Pt-Si system during the rapid thermal treatment. The Pt films 43.7 nm thick were applied on the substrates of mono-crystal silicon KEF 0.5 with orientation (111) by means of the magnetron platinum target sputtering (purity of 99.95 %) on the unit MPC 603 with the cryogen pumping to the pressure of no less than 5∙10-5 Pa. Argon was used as a working medium, whose purity constituted 99.933 %. Rapid thermal treatment was performed in the mode of the thermal balance with irradiation of the reverse side of the wafer by means of the non-coherent light flow in the nitrogen medium within the temperature range from 200 to 550 °C with a step of 50 °С during 7 s. In parallel, the solid phase synthesis was performed of platinum silicide by means of the standard method with application of the continuous single stage thermal treatment in the analogue medium (T = 550 °C, t = 30 min). Temperature monitoring was performed by means of the thermal couple method with accuracy of ±0.5 °C. The grain size was determined by the translucent electron microscopy method. Thickness of platinum silicide under formation, its surface micro-relief and the separation boundaries with silicon were determined by means of the raster electron microscopy. It is demonstrated, that with the rise of the rapid thermal treatment one can observe growth of the platinum film on silicon. A comparative analysis was conducted of the average size of grains, micro-relief of the PtSi surface and its separation boundary with silicon for two methods of its formation with application of the rapid thermal treatment and with application of the traditional continuous thermal treatment at the temperature of 550 °C during 30 min in the nitrogen atmosphere. By means of the raster electron microscopy method it is demonstrated, that size of the micro-relief on the separation boundary of PtSi-Si does not exceed 15.9 nm and the size of grains is 37.7 nm. This is in 2.5 and 3.1 times smaller, then in the case of the traditional single stage continuous thermal treatment.

Technological Processes for Obtaining Monolithic Polydisperse Protein-Base Systems

This research addresses the challenges of sustainable use of natural polymers, including in technical fields. One of the leading trends in science and industry headway today lies in designing advanced functional materials, e.g. for manufacturing medical items, technical devices, food-processing tools et al. For this purpose, universally applicable technological processes are being developed, including in biotechnology. One of the main goals of this research is to explore ways to consolidate living systems, by instilling in them desirable physical and chemical properties so as to diversify their applications, including in technical fields. Polymers structure and properties have been investigated via raster electron microscopy, spectral analysis, et al.

Premature Ovarian Failure

Using autoradiography, transmission and raster electron microscopy, this review shows how oocytes disappear in human ovaries. Clinical, hormonal and ultrasound (using 3D, vocal and inverse mode) parameters used in the diagnosis of early ovarian aging are described on the light of the most recent knowledge.