Fe Nitride Formation in Fe–Si Alloys: Crystallographic and Thermodynamic Aspects

A Fe–3wt pctSi alloy was gas nitrided to study the effect of Si on the Fe nitride formation. Both ε-Fe3N1+x and γ′-Fe4N were observed at nitriding conditions only allowing to form single-phase γ′ layers in pure α-Fe. During short nitriding times, ε and γ′ simultaneously grow in contact with Si-supersaturated α-Fe(Si). Both nitrides almost invariably exhibit crystallographic orientation relationships with α-Fe, which are indicative of a partially displacive transformation of α-Fe being involved in the initial formation of ε and γ′. Due to Si constraining the Fe nitride growth, such transformation mechanism becomes highly important to the nitride layer formation, causing α-Fe-grain-dependent variations in the nitride layer morphology and thickness, as well as microstructure refinement within the nitride layer. After prolonged nitriding, α-Fe is depleted in Si due the pronounced precipitation of Si-rich nitride in α-Fe. The growth mode of the compound layer changes, now advancing by conventional planar-type growth. During nitriding times of 1 to 48 hours, ε exists in contact with the NH3/H2-containing nitriding atmosphere at a nitriding potential of 1 atm−1/2 and 540 °C, only allowing for the formation of γ′ in pure Fe, indicating that Si affects the thermodynamic stability ranges of ε and γ′.

Reversible displacive transformation in MnTe polymorphic semiconductor

Displacive transformation is a diffusionless transition through shearing and shuffling of atoms. Diffusionless displacive transition with modifications in physical properties can help manufacture fast semiconducting devices for applications such as data storage and switching. MnTe is known as a polymorphic compound. Here we show that a MnTe semiconductor film exhibits a reversible displacive transformation based on an atomic-plane shuffling mechanism, which results in large electrical and optical contrasts. We found that MnTe polycrystalline films show reversible resistive switching via fast Joule heating and enable nonvolatile memory with lower energy and faster operation compared with conventional phase-change materials showing diffusional amorphous-to-crystalline transition. We also found that the optical reflectance of MnTe films can be reversibly changed by laser heating. The present findings offer new insights into developing low power consumption and fast-operation electronic and photonic phase-change devices.

Microstructure Evolution in Belt-Casted Strip of Grain Oriented Electrical Steel

This paper deals with the formation and decomposition of Widmanstätten austenite during solidification of the thin belt-casted strip made of a grain oriented electrical steel (GOES). Solidification of liquid steel starts with the formation of d-ferrite. Cooling in the delta + gama phase field results in the formation of a small fraction of Widmanstätten austenite by displacive transformation accompanied by carbon partition. Widmanstätten austenite laths have an orientation relationship with the ferrite grain into which they grow. Furthermore, they form a flat low energy interface along the ferrite grain boundary. In order to minimize the interfacial energy, ferrite grain boundaries in the vicinity of flat austenite/ferrite interface facets are forced to migrate which results in straightening of these grain boundaries. If parallel Widmanstätten austenite laths form in two adjacent ferrite grains, zig–zag ferrite grain boundaries arise. Precipitation of sulphides along ferrite/austenite interfaces make it possible to study the early stages of austenite decomposition under the delta + gama phase field. It starts with the formation of epitaxial ferrite accompanied by further partitioning of carbon into remaining austenite. The growth of epitaxial ferrite into the flat ferrite/austenite interface facets along ferrite grain boundaries results in a wavy shape of these ferrite grain boundaries. Finally austenite transforms either to pearlite or to plate martensite.