Some geometrical properties of fission-track-surface intersections in apatite

Parallel fission-track-surface intersections identify the grains in an etched apatite mount that have been polished parallel to their prism faces and mark the orientations of their c-axes. Their lengths (Dpar) are a practical kinetic parameter that is indicative of the track annealing rate of apatite. Little is known, however, about their geometrical properties in non-prism faces. We present a model calculation of the frequency distributions of the orientations, lengths, and widths of track-surface intersections in non-prism faces. The current model does not include the effects of surface etching or measurement imprecision. However, as far as it goes, it is consistent with measurements in apatite surfaces up to 30° to the c-axis. Regardless of the model, we submit that the statistical properties of the fission-track-surface intersections have practical uses. The distribution of their orientations is characteristic of the orientation of the etched surface relative to the c-axis. The distribution of their lengths presents a possible tool for investigating track etching, in particular for evaluating the tracks added and lost through surface etching. The distribution of their widths is a potential kinetic parameter independent of surface orientation and less susceptible to the factors, such as the sampling method and surface etch rate, that produce conflicting Dpar values.

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Nomarski optical microscopic, KOH etching and synchrotron topographic studies are presented of faint needle-like surface morphological features in 4H-SiC homoepitaxial layers. Grazing incidence synchrotron white beam x-ray topographs show V shaped features which transmission topographs reveal to enclose 1/4[0001] Frank-type stacking faults. Some of these V-shaped features have a tail associated with them and are referred to as Y-shaped defects. Geometric analysis of the size and shape of the V-shaped faults indicates that they are fully contained within the epilayer and appear to be nucleated at the substrate/epilayer interface. Detailed analysis shows that the positions of the V-shaped stacking faults match with the positions of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate and thus appear to result from the deflection of these dislocations onto the basal plane during epilayer growth. Similarly, the Y-shaped defects match well with the substrate surface intersections of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate which were deflected onto the basal plane during substrate growth. Based on the observed morphology of these defect configurations we propose a model for their formation mechanism.