Atomic kinetic research of ordered quantum dot growth induced by dislocation on the substrate

In this study, the modified effects of stress originating from the dislocation on the substrate to the semiconductor quantum dot growth are investigated by performing an event-based continuous kinetic Monte Carlo simulation, in which the contribution of the dangling bond of the atom is considered. The research results indicate that the change of binding energy initiated by the stress between the deposit atom and the substrate's atoms may significantly influence the atoms' kinetic behaviors, and on the pattern surface the atoms' kinetic effects are very sensitive to the initial condition of the substrate. In addition, the dependence of the atomic kinetics on the growth flux and temperature are also studied. The simulation results are in good qualitative agreement with those of our experiment.

Polarization properties of the Ly-α line from sulphur plasmas driven by high-intensity, ultrashort-duration laser pulses1This article is part of a Special Issue on the 10th International Colloquium on Atomic Spectra and Oscillator Strengths for Astrophysical and Laboratory Plasmas.

We report on a modeling study of the polarization properties of the Ly-α line in sulphur. The lower energy (J = 1/2) fine-structure component is unpolarized, while the polarization degree of the higher energy component (J = 3/2) can serve as a signature of an anisotropic electron distribution. We calculate the polarization degree of the J = 3/2 component with the help of a magnetic-sublevel population atomic kinetics model for plasma conditions that can arise in laser-produced plasma experiments. This demonstrates how observed polarization properties of the Ly-α could be connected with the characteristics of an anisotropic electron distribution.