Role of Dislocations in the Process of Degradation of Semiconductor Lasers with Electronic Energy Pumping. Experimental Research

Light self-destruction-degradation of the second type has been observed in samples of semiconductor lasers with electronic energy pumping with high optical homogeneity and good quality of surface treatment. In these samples, damage appeared in the form of cords perpendicular to the ends of the resonator. According to the current understanding of the passage of powerful light streams through various media, the emergence of narrow light channels is due to the phenomenon of self-focusing. It refers to the fundamental physical mechanisms of propagation of laser radiation and is caused by nonlinear phenomena arising in a medium under the influence of high-power laser radiation. The physical reason for self-focusing is an increase in the refractive index n in a strong light field. Thermal self-focusing is the most probable cause of radiation redistribution in the active region of the crystal. However, it is possible that in the initial stage of the appearance of light channels a certain role is played by the growth of the intensity of radiation in certain sections of the crystal because of the instability of generation or small fluctuations in the pump current density. Then the process acquires an avalanche character, since the localization of the ray in the channel increases the density of light radiation which can lead to overheating of the substance and the activation of the thermal self-focusing mechanism. The experiments performed in this paper have shown that optically homogeneous crystals possess maximum resistance to degradation processes. In them, the critical power of light destruction is determined by the self-focusing threshold of radiation in a material. Since the nonlinear addition to the refractive index Δn = n2E2 at the self-focusing threshold is determined by the change in the concentration of non-equilibrium carriers ΔN(E2), the value of the maximum fluctuation DΔNmax itself is proportional to the value of the non-equilibrium carrier concentration at the generation threshold ΔNpores and the relative excess of the generation threshold J = (j – jn)/jn. Thus, a low threshold concentration of non-equilibrium carriers is one of the conditions for increasing material resistance to degradation processes. In doped crystals ΔNpores is less than in pure materials. This, perhaps, explains the rather higher value of Pcritial in the optimally doped homogeneous n-GaAs. Smaller values of Pcritial in p-type samples doped with zinc can be associated not only with the inhomogeneity of these crystals, but also with large generation thresholds. In addition, the cross section for absorption of radiation by holes is about 3–4 times larger than by electrons, which can also reduce the self-destruction threshold of lasers. At Т = 300 K, the lasing thresholds are higher that naturally reduces the value of the self-focusing threshold.

Hydrocarbon generation and evolution of the source rocks of the lower Es3 and upper Es4 members of the Shahejie Formation in the Niuzhuang Sub-sag, Jiyang Depression, Bohai Bay Basin, eastern China

Systematic organic petrology and geochemistry analyses have been conducted in the source rocks of the lower Es3 and upper Es4 members of the Shahejie Formation in the Niuzhuang Sub-sag, Jiyang Depression, Bohai Bay Basin, eastern China. The results indicate that the main organic types of shale and nongypsum mudstone in the lower Es3 and upper Es4 member are I-II1 kerogen, and the predominant ([Formula: see text]) activation energy frequencies range from 57 to [Formula: see text]. The similar distribution characteristics in the two source rocks indicate that they have a similar hydrocarbon maturation process. An extensive pyrolysis analysis indicates that the source rocks of the upper Es4 member do not have an obvious double peak hydrocarbon generation model. Previous studies indicate that the hydrocarbon index peak at a depth of 2500–2700 m is affected by migrating hydrocarbon. Major differences are not observed in the hydrocarbon generation and evolution process of the shale and nongypsum mudstone. The primary oil generation threshold of the lower Es3 and upper Es4 members is approximately 3200 m, and the oil generation peak is approximately 3500 m. The activation energy distribution of the gypsum mudstone of the upper Es4 member is wider than that of the shale and nongypsum mudstone, and lower activation energies account for a larger proportion of the activation energies. The above factors may lead to a shallower oil generation threshold for gypsum mudstone compared with that for shale and nongypsum mudstone.

DYNAMICS OF SELF-OSCILLATIONS IN A TWO-STAGE VAN DER POL OSCILLATOR

The results of numerical simulation of self-oscillations in a two-stage ring oscillator with active cells of Van der Pol are presented. It is shown that for large exceedances of generation threshold in a system with identical cells, non-uniform spatial distribution of amplitudes of self-oscillations is observed.

Light Amplification Analysis

The main geometrical and quantum relationships between light and a substance are derived by characterizing the laser’s light generation, threshold, resonances, stability, multimode locking and selection, polarization and stimulated Raman phase matching towards achieving the best energy gain, intensities, and optical information on the involved states either of light or of the substance that is investigated.