Tax and Pandemic; Curbing Carbon Burden of India’s Blue Sky

Out line: Carbon dioxide is one of major signatures of Anthropocene. Energy sector contribute maximum to CO2 emission. Reaching 1.4billion population, India must strides to provide affordable, riskless, secure, uninterrupted and cleaner energy with energy security prioritized. The CO2 emission in India was 2201.865 MT CO2 e in 2019 matched to 2172.19 MT CO2e in the previous year. The apocalyptic pandemic of COVID19 have shut down the cities and forced people to migrate to native places as a result the carbon dioxide level has reduced in the sky. Methodology: After carbon tax implementation from 2010 and post Paris Agreement surge in Carbon tax in India’s climate from 2015 there was slow decline of CO2 level in the ever rising global grey sky. The carbon tax had raised faster rate but its effect was slow. Lockdowns, closures and confinement during the pandemic COVID-19 from March 2020 in India is the real-life experience explaining the additive control of carbon level of polluted air along with the burden of carbon tax globally including India. Discussion: The socio-economic impact of shutdowns of all industrial units, power generation and transport sectors along with immediate migration of all workers to their native place have dropped carbon level in air and initialized the concept of blue sky thinking. The present apocalyptic complex pandemic without vaccine has forced the government machinery to be utilized for life, neglecting livelihood. Presently after 4 stages of lock downs, the uplift of restrictions in 5th stage is allowed for lively hood and socio-economic sustenance. Conclusion: As post pandemic measures under economic bankruptcy, the Indian government should initiate strategic plans to restore the socio-economic normalcy and relax the heavy carbon tax on Indians as the carbon level is reduced as a major impact of COVID-19 during 2020.

Supersolidus Sintering of Cr Prealloyed Steels by Inductive Heating

For powder metallurgy products, high density is an essential requirements to obtain maximum mechanical properties. Here, supersolidus liquid phase sintering (SSPLS) is an effective means to attain high sintered density, as known from PM high speed steels. In the present work it is shown that this technique can also be applied to Cr prealloyed low alloy steel grades. Supersolidus sintering through indirect heating requires precise control of temperature and also the atmosphere, to avoid uncontrolled changes of the carbon level. Higher C contents are beneficial here since they enable lower temperatures and result in wider temperature windows for sintering. The temperatures necessary for SSLPS at moderate C levels are fairly high for standard sintering furnaces, therefore induction sintering was studied in this work. It showed that, as was to be expected, also here precise temperature control is required, but for any carbon level tested a sintering temperature could be identified that yielded high sintered density and good shape retention. The high density attained, in combination with the very high temperatures, results in pronounced grain growth, this process no more being inhibited by the presence of pores, which is undesirable but can however be remedied by suitable heat treatment.

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH₃ plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH₃ plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH₃ plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

Atomic Layer Deposition of Inn Using Trimethylindium and Ammonia Plasma

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH₃ plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>