sequential double ionization
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2020 ◽  
Vol 747 ◽  
pp. 137326
Author(s):  
Qing-yun Xu ◽  
Shuai Ben ◽  
Yue Sun ◽  
Hai-feng Xu ◽  
Xue-shen Liu ◽  
...  

2020 ◽  
Vol 1412 ◽  
pp. 152003
Author(s):  
A N Artemyev ◽  
A I Streltsov ◽  
Ph V Demekhin

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
G. P. Katsoulis ◽  
A. Emmanouilidou

AbstractWe study double ionization of He driven by near-single-cycle laser pulses at low intensities at 400 nm. Using a three-dimensional semiclassical model, we identify the pathways that prevail non-sequential double ionization (NSDI). We focus mostly on the delayed pathway, where one electron ionizes with a time-delay after recollision. We have recently shown that the mechanism that prevails the delayed pathway depends on intensity. For low intensities slingshot-NSDI is the dominant mechanism. Here, we identify the differences in two-electron probability distributions of the prevailing NSDI pathways. This allows us to identify properties of the two-electron escape and thus gain significant insight into slingshot-NSDI. Interestingly, we find that an observable fingerpint of slingshot-NSDI is the two electrons escaping with large and roughly equal energies.


2019 ◽  
Vol 73 (5) ◽  
Author(s):  
Elena V. Gryzlova ◽  
Alexei N. Grum-Grzhimailo ◽  
Maksim D. Kiselev ◽  
Sergey M. Burkov

2018 ◽  
Vol 426 ◽  
pp. 602-606 ◽  
Author(s):  
Qiu-Yue Zhu ◽  
Tong-Tong Xu ◽  
Shuai Ben ◽  
Jia-He Chen ◽  
Kai-Li Song ◽  
...  

2017 ◽  
Vol 96 (3) ◽  
Author(s):  
Michael G. Pullen ◽  
Benjamin Wolter ◽  
Xu Wang ◽  
Xiao-Min Tong ◽  
Michele Sclafani ◽  
...  

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