asynchronous system
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2021 ◽  
Vol 68 (1) ◽  
pp. 311-321
Author(s):  
Ningyuan Yin ◽  
Baofa Huang ◽  
Xiaobai Chen ◽  
Jianjun Chen ◽  
Zhiyi Yu

2019 ◽  
pp. 323-338
Author(s):  
Shawn Andersson ◽  
Maho Nakahashi

This paper explores expanding a self-access language learning desk online. In 2017, Osaka University’s Center for International Affairs expanded its Language Support Desk to allow students from different campuses to access its services via online synchronous language support sessions that mimic the in-person ones. While there is an abundance of resources available to students online through online writing labs and online writing centers, most of these services only consist of reference materials with no option for advising or language teaching. Furthermore, the few universities that offer language learning services usually implement an asynchronous system through a delayed medium such as email. In this paper, we describe the implementation of online sessions at Osaka Unversity and highlight issues and opportunities for the future based on our experience and observations.


2016 ◽  
Vol 833 ◽  
pp. 119-125
Author(s):  
Norhuzaimin Julai

A single event upset (SEU) or soft error is defined as a temporary error on digital electronics due to the effect of radiation. Such an error can cause system failure, e.g. a deadlock in an asynchronous system or production of incorrect outputs due to data corruption. With increasing system complexities and integration scale, transistors have become more vulnerable to soft error, necessitating analysis of soft error in circuits, which is the focus of this thesis. Vulnerability of circuits to soft errors is further aggravated by several factors, such as variations in the process and temperatures. Process variations are inaccuracies in the manufacturing process which may lead to deterioration of circuit performance and increase in power consumption. Temperature variation degrades the threshold voltage, carrier mobility and velocity saturation of transistor. As a result of degrading carrier mobility, the drain current becomes lower thus increasing the sensitivity of the node to SEU.


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