scholarly journals ARMOUR BLOCKS AS SLOPE PROTECTION

1976 ◽  
Vol 1 (15) ◽  
pp. 146 ◽  
Author(s):  
A.F. Willock ◽  
W.A. Price
Keyword(s):  
Wave Height ◽  
Angle Of Attack ◽  
Coastal Engineering ◽  
Natural Stone ◽  
Research Station ◽  
K Value ◽  
High K ◽  
Block Stability ◽  
Engineering Conference ◽  
Design Weight

Dolosse blocks were first described in 1966 by Merrifield and Zwamborn in a paper to the 10th Coastal Engineering Conference held in Tokyo. They reported a block whose design weight was one-fifth to one-sixth that of natural stone to resist the same wave height. The reaction of the profession was surprise and perhaps a little disbelief that the new block could have such a high K value. A considerable amount of testing followed in a number of hydraulic laboratories. Quite a lot of work was done at the Hydraulics Research Station at Wallingford and some interesting points came to light. The paper discusses how wave period and angle of attack affect block stability and suggests a way in which engineers might approach the problem of design of breakwaters.

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Data normalization for training and analysis of the MaskRCNN model using the k-means method for computer vision of smart refrigerator

2021 ◽  
Vol 4 ◽  
pp. 74-80
Author(s):  
M. G. Dorrer ◽  
◽  
A.E. Alekhina ◽  
Keyword(s):  
Computer Vision ◽  
Semantic Segmentation ◽  
Correct Choice ◽  
Training Sample ◽  
Artificial Vision ◽  
K Value ◽  
High K ◽  
Real World Datasets ◽  
Segmentation Problem

This paper proposes using the k-means method for the controlled adjustment of the training sample for semantic image segmentation in the artificial vision of a smart refrigerator. To solve this problem, a new two-stage architecture for computer vision is proposed. In the proposed architecture, various sets of settings for optimizing the contrast of images are used to classify pixels according to their belonging to fragments of the studied image. Extensive experimental evaluation shows that the proposed method has critical advantages over existing work. Firstly, the obtained pixel classes can be directly clustered into semantic groups using k-means. Secondly, the method can be used for additional training of artificial intelligence in solving the semantic segmentation problem. The developers propose an approach to the correct choice of the number k of centroids to obtain good quality clusters, which is difficult to determine at a high k value. To overcome the problem of initializing the k-means method, an incremental k-means clustering method is proposed, which improves the quality of clusters to reduce the sum of squared errors. Comprehensive experiments have been carried out compared to the traditional k-means algorithm and its new versions to evaluate the performance of the proposed method on synthetically generated datasets and some real-world datasets.

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

scholarly journals Hydrogen Diffusion Coefficient, Hydrogen Solution Coefficient and Hydrogen Permeability of Nb-TiNi Eutectic Alloy

2010 ◽  
Vol 638-642 ◽  
pp. 1131-1136
Author(s):  
Wei Liang Wang ◽  
Kazuhiro Ishikawa ◽  
Kiyoshi Aoki
Keyword(s):  
Diffusion Coefficient ◽  
Hydrogen Absorption ◽  
Hydrogen Diffusion ◽  
Hydrogen Permeability ◽  
K Value ◽  
Hydrogen Flow ◽  
Hydrogen Diffusion Coefficient ◽  
High K ◽  
Pressure Region ◽  
The Difference

In general, hydrogen permeabilityΦ of the alloy membrane is expressed as the product of the hydrogen diffusion coefficient D and the hydrogen solution coefficient K. Therefore, to improve the hydrogen permeability efficiently, the values of K and D should be separately considered. In the present study, hydrogen absorption and permeation behaviors of the Nb19Ti40Ni41 alloy consisting of the eutectic phase are investigated by measuring pressure-composition-isotherm (PCI) and by the hydrogen flow method and compared with those of palladium. The hydrogen absorption in the Nb19Ti40Ni41 alloy does not obey the Sieverts’ law in the pressure region of 0-1.0MPa at 523K, but it shows linear relationship between the difference in the square root of hydrogen pressure and hydrogen content between 0.1 and 0.4MPa. Although the value of D for the Nb19Ti40Ni41 alloy is considerably lower than that of palladium, its high K value enhances the hydrogen permeability Φ. It is suggested that the enhancement of D by microstructural control for Nb19Ti40Ni41 alloy is effective for improvement of Φ.

Physical-Chemical Evolution of Hf-aluminates upon Thermal Treatments

2003 ◽  
Vol 765 ◽  
Author(s):  
B. Crivelli ◽  
M. Alessandri ◽  
S. Alberici ◽  
D. Brazzelli ◽  
A. C. Elbaz ◽  
...  
Keyword(s):  
Orthorhombic Phase ◽  
Interface Layer ◽  
Film Structure ◽  
Thermal Treatments ◽  
Tem Analysis ◽  
K Value ◽  
Physical Chemical ◽  
High K ◽  
Post Deposition ◽  
Limited Oxygen

AbstractThis study presents an investigation on physical-chemical stability of (HfO2)x(Al2O3 )1-x alloys upon prolonged post-deposition annealings. Two different Hf-aluminates were deposited by ALCVDTM, containing 34% and 74% Al2O3 mol% respectively. Post-deposition annealings (PDA) were carried out in O2 or N2 atmosphere, at 850°C and 900°C for 30 minutes. Interfacial layer (IL) increase after PDA was detected on all the samples, but with small differences between N2 and O2 treatments. Stack composition was characterized by means of XRR, XRF, RBS and TOF-SIMS. Growth of interface layer was justified by limited oxygen incorporation from external ambient. Silicon diffusion from the substrate into high-k material and aluminum/hafnium redistribution were observed and associated to annealing temperature. XRD and planar TEM analysis evidenced first grain formation and then, in the case of Hf-rich samples, almost complete crystallization. Overall, Hf-aluminates were found to remain XRD amorphous during high temperature prolonged treatments up to 900°C for 74% and 850°C for 34% alloys respectively. Differently from HfO2, (HfO2)0.66(Al2O3 )0.34 alloy was observed to crystallized in orthorhombic phase. Hf-aluminates were also electrically characterized by means of C(V) and I(V) measurements on basic capacitors. Variations in material electrical properties were found consistent with change in physical-chemical film structure. Increase in k value up to 30 was observed on Hf-rich samples crystallized in orthorhombic phase.

scholarly journals Complete Proceedings - Single PDF Download

1976 ◽  
Vol 1 (15) ◽  
Author(s):  
ASCE ASCE
Keyword(s):  
Research Council ◽  
Coastal Engineering ◽  
The State ◽  
Engineering Research ◽  
Engineering Conference

Proceedings of the Fifteenth Coastal Engineering Conference, Honolulu, HI, July 11-17, 1976 Sponsored by the State of Hawaii, University of Hawaii, ASCE through its Coastal Engineering Research Council, and American Shore and Beach Preservation Association.

Scaling of Hafnium-based High-k Dielectrics

2007 ◽  
Vol 996 ◽  
Author(s):  
Dina H. Triyoso ◽  
Rama I. Hegde ◽  
Rich Gregory ◽  
David C. Gilmer ◽  
James K. Schaeffer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Threshold Voltage ◽  
Tetragonal Phase ◽  
Minimum Thickness ◽  
Equivalent Thickness ◽  
K Value ◽  
Good Thermal Stability ◽  
Bilayer Films ◽  
High K ◽  
High Dielectric

AbstractIn this paper, various approaches to extend scalability of Hafnium-based dielectrics are reported. Among the three crystal phases of HfO2 (monoclinic, cubic and tetragonal), the tetragonal phase has been reported to have the highest dielectric constant. Tetragonal phase stabilization by crystallizing the thin HfO2 using a metal capping layer and by adding zirconium is demonstrated. The microstructure, morphology, optical properties and impurities of HfxZr1-xO2 dielectrics (for 0<x<1) are discussed. Subtle but important modification to high-k / Si interface characteristics resulting from addition of Zr into HfO2 is reported. To further boost the dielectric constant of hafnium-based dielectrics, incorporation of TiO2, which has been reported to have high dielectric constant, is explored. HfxZr1-xO2/TiO2 bilayer films were fabricated. 30 Å TiO2 films were deposited on a 5, 8, 12 or 15 Å HfxZr1-xO2 underlayer to determine the minimum thickness needed to maintain good thermal stability with Si substrate. CV and IV results indicated that 12-15 Å is the optimal thickness range for the HfxZr1-xO2 underlayer. A dielectric constant as high as 150 for TiO2 layer is extracted from TiO2 thickness series deposited on12 Å HfxZr1-xO2 underlayer. In addition to increasing the k-value of Hafnium-based dielectrics, it is important that the threshold voltage of these high-k devices is low. Here we report the use of thin Al2O3 capping layers to modulate PMOS threshold voltages. About 100 mV reduction in threshold voltage is achieved by capping HfO2 with a 5Å Al2O3 film. Finally, dielectric scaling by modifying the Si/high-k interfacial layer is attempted. Nitrogen incorporation into HfxZr1-xO2 is shown to be a simple and effective method to lower the capacitance equivalent thickness (CET) of Hafnium-based dielectrics.

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