Beam-Plasma Type Ion Source for High-Intensity Ion Beam and Its Application to Surface Micro-Analyzer

1974 ◽  
Vol 13 (S1) ◽  
pp. 423
Author(s):  
Toshinori Takagi ◽  
Isao Yamada ◽  
Junzo Ishikawa ◽  
Fumimichi Sano ◽  
Toru Kishi
Keyword(s):  
High Intensity ◽  
Ion Beam ◽  
Ion Source ◽  
Beam Plasma

Ion beam extraction with ion space‐charge compensation in beam‐plasma type ion source

1982 ◽  
Vol 53 (9) ◽  
pp. 6018-6028 ◽  
Author(s):  
Junzo Ishikawa ◽  
Fumimichi Sano ◽  
Toshinori Takagi
Keyword(s):  
Space Charge ◽  
Ion Beam ◽  
Charge Compensation ◽  
Ion Source ◽  
Beam Extraction ◽  
Beam Plasma

scholarly journals Generation and transportation of high-intensity pulsed ion beam at varying background pressures

2017 ◽  
Vol 35 (4) ◽  
pp. 587-596 ◽  
Author(s):  
X.P. Zhu ◽  
L. Ding ◽  
Q. Zhang ◽  
Yu. Isakova ◽  
Y. Bondarenko ◽  
...  
Keyword(s):  
Energy Density ◽  
High Intensity ◽  
Focal Point ◽  
Ion Beam ◽  
Industrial Applications ◽  
Ion Source ◽  
Beam Deflection ◽  
Appreciable Change ◽  
Energy Density Distribution ◽  
Wide Range

AbstractHigh-intensity pulsed ion beam (HIPIB) technology is developed as an advanced manufacturing method for components with improved wear, corrosion and/or fatigue performance, etc. Robust HIPIB equipment with stable repetitive operation, long-lifetime, and easy maintenance are desired for industrial applications, on which stability of ion beam parameters is critical to achieve consistent result of reproducibility. Here, magnetically insulated ion diodes (MIDs) as ion source with durable graphite anode are investigated in a simple self-magnetic field configuration under repetitive operation. Influence of background pressure on ion beam generation and transportation is emphasized since ion beam sources were intrinsically a vacuum-based system. Comparative experiments were conducted on two types of HIPIB equipment, that is, TEMP-6 and TEMP-4M, differing in vacuum packages where turbo-molecular pump or oil diffusion pump was used. Both the HIPIB equipments are operated on a bipolar pulse mode, that is, a first negative pulse of 150–200 kV with pulse duration 450–500 ns to generate anode plasma on explosive electron emission, and a second positive pulse of 200–250 kV with 120 ns to accelerate the ions. Ion beam energy density up to 8 J/cm2 is achievable using MIDs of geometrical focusing configuration, and the total energy, energy density distribution along cross-section, deflection and divergence, and charge neutralization of the ion beams are assessed under background pressures in a wide range of two orders of magnitude, that is, 1–100 mPa. No appreciable change in the parameters is observed up to 50 mPa, and merely a slight increase in the beam deflection from about ±3 mm to about ±4 mm at the focal point over 50 mPa. The stability of ion beam at the varied pressure is mainly facilitated by the higher pressure up to several Pa in anode–cathode gap during plasma generation and good neutralizing effect for ion beam transportation.

scholarly journals Significance of time-of-flight ion energy spectrum on energy deposition into matter by high-intensity pulsed ion beam

2010 ◽  
Vol 28 (3) ◽  
pp. 429-436 ◽  
Author(s):  
J.P. Xin ◽  
X.P. Zhu ◽  
M.K. Lei
Keyword(s):  
Energy Spectrum ◽  
Kinetic Energy ◽  
Energy Distribution ◽  
High Intensity ◽  
Energy Deposition ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Source ◽  
Ion Current ◽  
Ion Energy

AbstractEnergy deposition by high-intensity pulsed ion beam into a metal target has been studied with time-of-flight (TOF) of ions which can be related to the original ion kinetic energy E0 and the ion mass with $t_{\rm TOF} \propto 1/\sqrt{2E_{0}/m_{i}}$. It is found that the TOF effect has a profound influence on the kinetic energy distribution of implanted ions and subsequent energy deposition process into the target. The HIPIB of mixed H+ and C+ was extracted from a magnetically insulated ion diode at a peak accelerating voltage of 350 kV, leading to an ion current density of 300 A/cm2 at the target. The widespread ion energy spectrum remarkably varied in shape as arriving at the target surface, from the original Gaussian-like of 80-ns duration to a pulse form of a sharp front and a long tail extending to about 140-ns duration. Energy loss of the mixed ions into a Ti target was simulated utilizing a Monte Carlo method. The energy deposition generally showed a shallowing trend and could be divided into two phases proceeded with sequent arrivals of H+ and C+. Note that, the peak value of deposited energy profile appeared at the beginning of mixed ion irradiation phase, other than the phase of firstly arrived H+ with peak kinetic energy and peak ion current. This study indicated that TOF effect of ions greatly affects the HIPIB-matter interaction with a kinetic energy spectrum of impinging ions at the target, noticeably differing from that of original output of the ion source; consequently, the specific energy deposition phenomena of the widespread ion energy can be studied with the TOF correlation of ion energy and ion current, otherwise not obtainable in common cases assuming fixed ion energy distribution in accordance with the original source output.

scholarly journals Phase transformation under beam-target interactions during high-intensity pulsed ion beam irradiation at low pressure

2011 ◽  
Vol 29 (3) ◽  
pp. 283-289 ◽  
Author(s):  
X.P. Zhu ◽  
F.G. Zhang ◽  
Y. Tang ◽  
M.K. Lei
Keyword(s):  
Phase Transformation ◽  
High Intensity ◽  
High Efficiency ◽  
Ion Beam ◽  
Low Pressure ◽  
Ion Source ◽  
Source Material ◽  
Gaseous Species ◽  
Titanium Target ◽  
Ion Species

AbstractNitrides and/or carbonitrides formation of high efficiency was found on titanium target under irradiation of high-intensity pulsed ion beam (HIPIB) with a few shots at a low pressure of 10−2 Pa order, which is extraordinary in comparison with conventional thermo-chemical diffusion process such as gas nitriding and/or carbonitriding of metals necessarily heated at high temperatures during a processing time of hours. The underlying mechanism of the nitrides and carbonitrides formation on titanium targets was explored by a comparative study on three typical HIPIB sources, i.e., TEMP-6, TEMP-4M, and ETIGO-II, varying the irradiation intensity within several J/cm2 per shot of a 60–70 ns pulse duration and the shot number of similar ion species. It is revealed that ambient gases and ion source material are the main sources providing the nitrogen and carbon species for the phase transformation on titanium target at the low pressures, whereas the ion species of HIPIB composition is negligible at a low implantation dose of 1013–1014 ions/cm2. The adsorbed gaseous species, the deposited layer of the ion source material, and in-situ formed compound top layer from reactions between ablation plasma and the ambient species during HIPIB irradiation, can be effectively incorporated into the irradiated target surfaces under a controlled HIPIB-target interaction.

Development of a Negative Hydrogen Ion Source for Spatial Beam Profile Measurement of a High Intensity Positive Ion Beam

2011 ◽  
Author(s):  
Katsuhiro Shinto ◽  
Motoi Wada ◽  
Tomoaki Nishida ◽  
Yasuhiro Demura ◽  
Daichi Sasaki ◽  
...  
Keyword(s):  
High Intensity ◽  
Ion Beam ◽  
Ion Source ◽  
Beam Profile ◽  
Hydrogen Ion ◽  
Profile Measurement ◽  
Spatial Beam ◽  
Negative Hydrogen Ion ◽  
Positive Ion

A new microwave coupling scheme for high intensity highly charged ion beam production by high power 24–28 GHz SECRAL ion source

2020 ◽  
Vol 91 (1) ◽  
pp. 013322 ◽  
Author(s):  
J. W. Guo ◽  
L. Sun ◽  
W. Lu ◽  
W. H. Zhang ◽  
Y. C. Feng ◽  
...  
Keyword(s):  
High Power ◽  
High Intensity ◽  
Ion Beam ◽  
Ion Source ◽  
Coupling Scheme ◽  
Beam Production ◽  
Highly Charged Ion

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

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