scholarly journals Production and Measurement of Dense Metal Ions for Physical Vapor Deposition by a Hollow Cathode Discharge

1974 ◽  
Vol 13 (S1) ◽  
pp. 415 ◽  
Author(s):  
Souji Komiya ◽  
Kazuyuki Tsuruoka
Keyword(s):  
Metal Ions ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Hollow Cathode Discharge

Ionized physical-vapor deposition using a hollow-cathode magnetron source for advanced metallization

2000 ◽  
Vol 18 (4) ◽  
pp. 1546-1549 ◽  
Author(s):  
E. Klawuhn ◽  
G. C. D’Couto ◽  
K. A. Ashtiani ◽  
P. Rymer ◽  
M. A. Biberger ◽  
...  
Keyword(s):  
Hollow Cathode ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ionized Physical Vapor Deposition

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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