In situ physical vapor deposition of ionized Ti and TiN thin films using hollow cathode magnetron plasma source

2001 ◽  
Vol 19 (1) ◽  
pp. 244 ◽  
Author(s):  
G. C. D’Couto ◽  
G. Tkach ◽  
K. A. Ashtiani ◽  
L. Hartsough ◽  
E. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Plasma Source ◽  
Tin Thin Films

Thermodynamic Constraints for the In Situ MOCVD Growth of Superconducting Tl-Ba-Ca-Cu-O Thin Films

1993 ◽  
Vol 335 ◽  
Author(s):  
William L. Holstein
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Mocvd Growth ◽  
Metal Organic ◽  
Deposition Processes ◽  
Organic Chemical Vapor Deposition

AbstractIn spite of several attempts, superconducting Tl-Ba-Ca-Cu-O thin films have not been successfully prepared in situ by metal organic chemical vapor deposition (MOCVD). Preparation of a phase by MOCVD requires that it be thermodynamically stable with respect to its decomposition into volatile species and other condensed phases. For MOCVD growth of Tl-Ba- Ca-Cu-O compounds in the presence of oxygen from reagents containing only C-H or C-H-O ligands, Tl2O(g) and TIOH(g) exhibit appreciable volatility. If reagents with ligands containing fluorine are used, the formation of volatile TIF(g) must also be considered. Thermodynamic data for these materials are compiled, and thermodynamic relationships between these gases, H2O(g) and HF(g) are established. The thermodynamic stability of TIOH(g) and TIF(g) makes the in situ growth of Tl-Ba-Ca-Cu-O compounds by MOCVD more difficult than their in situ growth by physical vapor deposition processes, for which Tl2O(g) is the only volatile TI-containing species present.

scholarly journals Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD

2005 ◽  
Vol 490-491 ◽  
pp. 601-606
Author(s):  
Hajime Hirose ◽  
Shinya Suzuki ◽  
Masahide Gotoh ◽  
Toshihiko Sasaki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Stress Measurement ◽  
X Rays ◽  
Full Width ◽  
Half Maximum ◽  
X Ray ◽  
Tin Thin Films

In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.

scholarly journals Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Lu Guo ◽  
Shun-Li Shang ◽  
Neil Campbell ◽  
Paul G. Evans ◽  
Mark Rzchowski ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperatures ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
In Situ Synthesis ◽  
Key Species ◽  
High Partial Pressure

AbstractIn situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO3(g) and IrO2(g) at high temperatures and high PO2. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O2 system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties and the in situ synthesis of Pr2Ir2O7 thin films is fettered by the inability to grow with PO2 on the order of 10 Torr at high temperatures, a limitation inherent to the PVD process. Thus, we suggest techniques capable of supplying high partial pressure of key species during deposition, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr2Ir2O7.

In situ lateral patterning of thin films of various materials deposited by physical vapor deposition

2004 ◽  
Vol 19 (2) ◽  
pp. 595-599 ◽  
Author(s):  
Chi Zhang ◽  
Ramki Kalyanaraman
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Laser Interference ◽  
Interference Fringes ◽  
Long Range Ordering

An approach to pattern directly thin films of various materials deposited by different physical vapor deposition methods is presented. Co and Ag films deposited by pulsed laser deposition and e-beam evaporation, respectively, were fabricated into 650- and 1000-nm-spaced parallel stripes on Si(100) surfaces by simultaneous two-beam ultraviolet laser interference irradiation of the substrate surface during deposition. The resulting morphology consists of 1- to 2-nm-height stripes, which have the same direction and spacing as the interference fringes. This approach has the potential to allow long-range ordering of well-defined patterns over large areas because the spacing and geometrical patterns are defined by the laser interference. Furthermore, the fact that this method works for different materials and does not require any lithography masks, etching steps, or substrate prepatterning, makes it promising as a simple and economical lateral patterning approach.

Localized Physical Vapor Deposition via Focused Laser Spike Dewetting of Gold Thin Films for Nanoscale Patterning

2018 ◽  
Vol 2 (1) ◽  
pp. 586-597 ◽  
Author(s):  
Tianxing Ma ◽  
Michael P. Nitzsche ◽  
Arielle R. Gamboa ◽  
Valeria Saro-Cortes ◽  
Jonathan P. Singer
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Nanoscale Patterning ◽  
Gold Thin Films

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Synthesis of CeB6 thin films by physical vapor deposition and their field emission investigations

2012 ◽  
Vol 177 (1) ◽  
pp. 117-120 ◽  
Author(s):  
J.Q. Xu ◽  
T. Mori ◽  
Y. Bando ◽  
D. Golberg ◽  
D. Berthebaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Vapor Deposition ◽  
Physical Vapor Deposition

Optoelectronic properties of Sb2S3 thin films grown by Physical Vapor Deposition

2021 ◽  
Author(s):  
J. Cruz-Gomez ◽  
E. Hernandez-Cantero ◽  
D. Santos-Cruz ◽  
S.A. Mayen-Hernandez ◽  
F. DeMoure-Flores ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optoelectronic Properties
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