Disk Structure for High Performance Overwritable Phase-Change Optical Disks

1989 ◽  
Vol 28 (S3) ◽  
pp. 147 ◽  
Author(s):  
Yoshihito Maeda ◽  
Hiroyuki Minemura ◽  
Masaichi Nagai ◽  
Isao Ikuta ◽  
Hisashi Andoh
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Disk Structure ◽  
Optical Disks

Relationship between overwrite repeatability and the disk structure of InSbTe phase-change optical disks

1991 ◽  
Vol 74 (11) ◽  
pp. 58-65 ◽  
Author(s):  
Yoshihito Maeda ◽  
Hisashi Andoh ◽  
Hiroyuki Minemura ◽  
Yoshio Sato
Keyword(s):  
Phase Change ◽  
Disk Structure ◽  
Optical Disks

Disk structure and writing method for high-performance phase-change erasable optical disk

1990 ◽  
Author(s):  
Masaru Suzuki ◽  
Kazuyuki Furuya ◽  
Kazuhiro Nishimura ◽  
Koichi Mori ◽  
Isao Morimoto
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Optical Disk ◽  
Disk Structure

scholarly journals Ab initio molecular dynamics and materials design for embedded phase-change memory

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Liang Sun ◽  
Yu-Xing Zhou ◽  
Xu-Dong Wang ◽  
Yu-Han Chen ◽  
Volker L. Deringer ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Materials Design ◽  
Atomic Scale ◽  
Ab Initio Molecular Dynamics ◽  
Core Material ◽  
Structure Property ◽  
Switching Speed ◽  
Atomic Structures ◽  
Memory Applications

AbstractThe Ge2Sb2Te5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge2Sb1Te2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge2Sb1Te2 and elemental Ge, allowing for a direct comparison with the established Ge2Sb2Te5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

The Suppressing of Density Change in Nitrogen Doped Ge2Sb2Te5 for High Performance Phase Change Memory

2015 ◽  
Vol 4 (12) ◽  
pp. P105-P108 ◽  
Author(s):  
Z. Xu ◽  
B. Liu ◽  
Y. Chen ◽  
D. Gao ◽  
H. Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Density Change ◽  
Nitrogen Doped ◽  
Change Memory

High performance phase change media for DVD-RAM

2002 ◽  
Author(s):  
M. Terao ◽  
A. Hirotsune ◽  
Y. Miyauchi ◽  
M. Miyamoto ◽  
T. Nishida ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance

Characterization of Ultra-Fast Phase Change Optical Disk with GaSb Material

2003 ◽  
Vol 803 ◽  
Author(s):  
Kazunori Ito ◽  
Hiroko Tashiro ◽  
Makoto Harigaya ◽  
Eiko Suzuki ◽  
Katsuhiko Tani ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Melting Point ◽  
Phase Change ◽  
Crystal Growth Rate ◽  
Crystallization Mechanism ◽  
Fast Phase ◽  
Optical Disks ◽  
Digital Versatile Disk

ABSTRACTWe studied the crystallization mechanism of ultra-fast phase change optical disks with recording layers made of GaSb material for digital versatile disk (DVD) systems. The results of a static recording test and an amorphous mark formation simulation suggest that GaSb maintains a high crystal growth rate even at temperatures 150 degrees lower than the material's melting point. Disks with recording layers made of this material have a write speed margin ranging from DVD 3× to 8× or more.

Thermal Contact Resistance of Phase Change and Grease Type Polymeric Materials

2000 ◽  
Author(s):  
Ravi S. Prasher ◽  
Craig Simmons ◽  
Gary Solbrekken
Keyword(s):  
Thermal Conductivity ◽  
Contact Resistance ◽  
Phase Change ◽  
High Performance ◽  
Phase Change Materials ◽  
Thermal Contact ◽  
Polymeric Materials ◽  
Thermal Interface Material ◽  
Heat Spreader ◽  
Thermal Grease

Abstract Thermal interface material (TIM) between the die and the heat spreader or between the heat spreader and the heat sink in any electronic package plays a very important role in the thermal management of electronic cooling. Due to increased power and power density high-performance TIMs are sought every day. Phase change materials (PCM) seem to be very good alternative to traditionally used thermal greases because of various reasons. These phase change materials also have the advantage of being reworked easily without damaging the die. Typically these phase change materials are polymer based and are particle laden to enhance their thermal conductivity. The thermal conductivity of these materials is relatively well understood than their contact resistance. Current work focuses on explicitly measuring the contact resistance and the thermal conductivity of a particular phase change TIM and some silicon-based greases. Effect of various parameters, which can affect the contact resistance of theses TIMs and Greases, are also captured. The steady state measurements of the thermal conductivity and the contact resistance was done on an interface tester. In general the work on the contact resistance of fluid-like polymer based TIM, such as thermal grease or phase change polymer has been experimental in the past. A semi-analytical model, which captures the various parameters affecting the contact resistance of two class of materials; the phase change and the thermal grease is also developed in this paper. This model fits very well with the experimental data.

Sign in / Sign up

Export Citation Format

Share Document