Disk structure and writing method for high-performance phase-change erasable optical disk

1990 ◽  
Author(s):  
Masaru Suzuki ◽  
Kazuyuki Furuya ◽  
Kazuhiro Nishimura ◽  
Koichi Mori ◽  
Isao Morimoto
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Optical Disk ◽  
Disk Structure

New Disk Structure for Million Cycle Overwritable Phase Change Optical Disk

1995 ◽  
Vol 2 (2) ◽  
pp. 100-102 ◽  
Author(s):  
Tetsuya AKiyama ◽  
Kazumi Yoshioka ◽  
Kazuo Inoue ◽  
Hidemi Isomura ◽  
Takeo Ohta
Keyword(s):  
Phase Change ◽  
Optical Disk ◽  
Disk Structure

Disk Structure for High Performance Overwritable Phase-Change Optical Disks

1989 ◽  
Vol 28 (S3) ◽  
pp. 147 ◽  
Author(s):  
Yoshihito Maeda ◽  
Hiroyuki Minemura ◽  
Masaichi Nagai ◽  
Isao Ikuta ◽  
Hisashi Andoh
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Disk Structure ◽  
Optical Disks

scholarly journals Ab initio molecular dynamics and materials design for embedded phase-change memory

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Liang Sun ◽  
Yu-Xing Zhou ◽  
Xu-Dong Wang ◽  
Yu-Han Chen ◽  
Volker L. Deringer ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Materials Design ◽  
Atomic Scale ◽  
Ab Initio Molecular Dynamics ◽  
Core Material ◽  
Structure Property ◽  
Switching Speed ◽  
Atomic Structures ◽  
Memory Applications

AbstractThe Ge2Sb2Te5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge2Sb1Te2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge2Sb1Te2 and elemental Ge, allowing for a direct comparison with the established Ge2Sb2Te5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

Optimization of mark edge recording waveform for a phase change rewritable optical disk using a 680 nm laser diode

1994 ◽  
Vol 1 (2) ◽  
pp. 183-187 ◽  
Author(s):  
Takashi Ishida ◽  
Mamoru Shoji ◽  
Yoshiyuki Miyabata ◽  
Yasumasa Shibata ◽  
Eiji Ohno ◽  
...  
Keyword(s):  
Phase Change ◽  
Laser Diode ◽  
Optical Disk

The Suppressing of Density Change in Nitrogen Doped Ge2Sb2Te5 for High Performance Phase Change Memory

2015 ◽  
Vol 4 (12) ◽  
pp. P105-P108 ◽  
Author(s):  
Z. Xu ◽  
B. Liu ◽  
Y. Chen ◽  
D. Gao ◽  
H. Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Density Change ◽  
Nitrogen Doped ◽  
Change Memory

High Performance Magneto-Optical Disk Using A New Plastic Substrate

1988 ◽  
Author(s):  
Toshio Niihara ◽  
Shinkichi Horigome ◽  
Ryoichi Sudou ◽  
Hiroyuki Suzuki ◽  
Masafumi Yoshihiro ◽  
...  
Keyword(s):  
High Performance ◽  
Optical Disk ◽  
Plastic Substrate

High performance phase change media for DVD-RAM

2002 ◽  
Author(s):  
M. Terao ◽  
A. Hirotsune ◽  
Y. Miyauchi ◽  
M. Miyamoto ◽  
T. Nishida ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance
Sign in / Sign up

Export Citation Format

Share Document