Erratum: “Polarization-induced resistance switching phenomenon in metal Au/ferroelectric vinylidene fluoride–trifluoroethylene/semiconductor Si junction”

2017 ◽  
Vol 56 (12) ◽  
pp. 129202 ◽  
Author(s):  
Naoto Enomoto ◽  
Yoichiro Hashizume ◽  
Takashi Nakajima ◽  
Soichiro Okamura
2009 ◽  
Vol 08 (01n02) ◽  
pp. 147-150 ◽  
Author(s):  
NURUL EZREENA MOHAMAD ◽  
KUNIO OKIMURA ◽  
JOE SAKAI

A simple device of VO 2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current–voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.


2008 ◽  
Vol 93 (15) ◽  
pp. 152110 ◽  
Author(s):  
G. Garbarino ◽  
M. Núñez-Regueiro ◽  
M. Armand ◽  
P. Lejay

2007 ◽  
Vol 98 (11) ◽  
Author(s):  
M. Quintero ◽  
P. Levy ◽  
A. G. Leyva ◽  
M. J. Rozenberg

2005 ◽  
Vol 488 (1-2) ◽  
pp. 98-102 ◽  
Author(s):  
Tong Lai Chen ◽  
Xiao Min Li ◽  
Rui Dong ◽  
Qun Wang ◽  
Li Dong Chen

1996 ◽  
Vol 32 (2) ◽  
pp. 87-92 ◽  
Author(s):  
A. Galdikas ◽  
A. Mironas ◽  
D. Senulienå ◽  
A. Šetkus

2008 ◽  
Vol 148 (1-3) ◽  
pp. 40-42 ◽  
Author(s):  
T. Ishihara ◽  
I. Ohkubo ◽  
K. Tsubouchi ◽  
H. Kumigashira ◽  
U.S. Joshi ◽  
...  

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