Wide frequency tuning in resonant-tunneling-diode terahertz oscillator using forward-biased varactor diode

2017 ◽  
Vol 56 (4) ◽  
pp. 040301 ◽  
Author(s):  
Seiichirou Kitagawa ◽  
Kota Ogino ◽  
Safumi Suzuki ◽  
Masahiro Asada
Keyword(s):  
Resonant Tunneling ◽  
Frequency Tuning ◽  
Resonant Tunneling Diode ◽  
Varactor Diode ◽  
Tunneling Diode

scholarly journals Terahertz Emitter Using Resonant-Tunneling Diode and Applications

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1384
Author(s):  
Masahiro Asada ◽  
Safumi Suzuki
Keyword(s):  
Output Power ◽  
High Frequency ◽  
Resonant Tunneling ◽  
Large Scale ◽  
Frequency Tuning ◽  
Resonant Tunneling Diode ◽  
High Output Power ◽  
Tunneling Diode ◽  
Spectral Narrowing ◽  
High Output

A compact source is important for various applications utilizing terahertz (THz) waves. In this paper, the recent progress in resonant-tunneling diode (RTD) THz oscillators, which are compact semiconductor THz sources, is reviewed, including principles and characteristics of oscillation, studies addressing high-frequency and high output power, a structure which can easily be fabricated, frequency tuning, spectral narrowing, different polarizations, and select applications. At present, fundamental oscillation up to 1.98 THz and output power of 0.7 mW at 1 THz by a large-scale array have been reported. For high-frequency and high output power, structures integrated with cylindrical and rectangular cavities have been proposed. Using oscillators integrated with varactor diodes and their arrays, wide electrical tuning of 400–900 GHz has been demonstrated. For spectral narrowing, a line width as narrow as 1 Hz has been obtained, through use of a phase-locked loop system with a frequency-tunable oscillator. Basic research for various applications—including imaging, spectroscopy, high-capacity wireless communication, and radar systems—of RTD oscillators has been carried out. Some recent results relating to these applications are discussed.

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized
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