Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

2017 ◽  
Vol 56 (3) ◽  
pp. 032102 ◽  
Author(s):  
Kazuki Tani ◽  
Shin-ichi Saito ◽  
Katsuya Oda ◽  
Makoto Miura ◽  
Yuki Wakayama ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

Reabsorption effects on direct band gap emission from germanium light emitting diodes

2014 ◽  
Author(s):  
Yen-Yu Chen ◽  
Chia-Chun Yen ◽  
Yi-Hsin Nien ◽  
Wen-Wei Hsu ◽  
Qing-Qi Chen ◽  
...  
Keyword(s):  
Band Gap ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

Ge and GeSn Light Emitters on Si

2015 ◽  
Vol 242 ◽  
pp. 353-360
Author(s):  
Michael Oehme ◽  
Martin Gollhofer ◽  
Konrad Kostecki ◽  
Roman Koerner ◽  
Stefan Bechler ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Optical Feedback ◽  
Heteroepitaxial Growth ◽  
Light Emitters ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Si Substrates ◽  
Direct Band ◽  
Clear Shift

The heteroepitaxial growth of GeSn and Ge crystals on Si substrates are investigated for Si-based photonic applications. Light Emitting Diodes with emission wavelengths from 2,100 to 1,550 nm could be demonstrated with active intrinsic GeSn light emitting layers between Ge barriers. A clear shift of the direct band gap toward the infrared beyond 2 μm is measured. Emission intensity is increased compared to Ge Light Emitting Diodes. Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices are demonstrated. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Pérot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1,660 nm and 1,700 nm.

Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes

2013 ◽  
Vol 50 (9) ◽  
pp. 305-308 ◽  
Author(s):  
P. Velha ◽  
K. F. Gallacher ◽  
D. C. Dumas ◽  
D. J. Paul ◽  
M. Myronov ◽  
...  
Keyword(s):  
Band Gap ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

2016 ◽  
Vol 602 ◽  
pp. 43-47 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emission ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

2016 ◽  
Vol 27 (43) ◽  
pp. 435204 ◽  
Author(s):  
Ajit K Katiyar ◽  
Andreas Grimm ◽  
R Bar ◽  
Jan Schmidt ◽  
Tobias Wietler ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Emission Characteristics ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Cyrine Ernandes ◽  
Lama Khalil ◽  
Hela Almabrouk ◽  
Debora Pierucci ◽  
Biyuan Zheng ◽  
...  
Keyword(s):  
Band Gap ◽  
Structure Evolution ◽  
Transition Metal Dichalcogenide ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Direct Band Gap ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Direct Band ◽  
Pl Intensity ◽  
Fast Increase

AbstractIn atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct band gap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1−x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1−x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono-layer to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1−x)Se2x, we performed a nano-angle-resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1−x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1−x)Se2x opens the way for spectrally tunable light-emitting devices.

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

2015 ◽  
Vol 106 (7) ◽  
pp. 071102 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Sho Kamezawa ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Metal Structure ◽  
Direct Band Gap ◽  
Direct Band
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