Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

2015 ◽  
Vol 106 (7) ◽  
pp. 071102 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Sho Kamezawa ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Metal Structure ◽  
Direct Band Gap ◽  
Direct Band

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

2016 ◽  
Vol 602 ◽  
pp. 43-47 ◽  
Author(s):  
Dong Wang ◽  
Takayuki Maekura ◽  
Keisuke Yamamoto ◽  
Hiroshi Nakashima
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emission ◽  
Direct Band Gap ◽  
Direct Band

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

2017 ◽  
Vol 56 (3) ◽  
pp. 032102 ◽  
Author(s):  
Kazuki Tani ◽  
Shin-ichi Saito ◽  
Katsuya Oda ◽  
Makoto Miura ◽  
Yuki Wakayama ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

2016 ◽  
Vol 27 (43) ◽  
pp. 435204 ◽  
Author(s):  
Ajit K Katiyar ◽  
Andreas Grimm ◽  
R Bar ◽  
Jan Schmidt ◽  
Tobias Wietler ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Emission Characteristics ◽  
Direct Band Gap ◽  
Direct Band

Synergistic effect by Na doping and S substitution for high thermoelectric performance of p-type MnTe

2017 ◽  
Vol 5 (21) ◽  
pp. 5076-5082 ◽  
Author(s):  
Yangyang Ren ◽  
Junyou Yang ◽  
Qinghui Jiang ◽  
Dan Zhang ◽  
Zhiwei Zhou ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Synergistic Effect ◽  
Band Gap ◽  
Room Temperature ◽  
Hole Concentration ◽  
Direct Band Gap ◽  
Na Doping ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Pristine MnTe is a p-type semiconductor with a relatively low hole concentration of 1018 cm−3, low electrical conductivity, and thus poor TE performance at room temperature owing to the broad direct band gap of 1.27 eV.

scholarly journals Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

2017 ◽  
Vol 11 (2) ◽  
pp. 127-135 ◽  
Author(s):  
Martina Gilic ◽  
Milica Petrovic ◽  
Jovana Cirkovic ◽  
Novica Paunovic ◽  
Svetlana Savic-Sevic ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Room Temperature ◽  
Band Gaps ◽  
Photoluminescence Spectra ◽  
Indirect Transition ◽  
Direct Transition ◽  
Direct Band Gap ◽  
Vis Spectroscopy ◽  
Direct Band

Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K) and UV-VIS spectroscopy (T = 300K). Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.

Prediction of room-temperature ferromagnetism in a two-dimensional direct band gap semiconductor

Nanoscale ◽  
2020 ◽  
Vol 12 (29) ◽  
pp. 15670-15676 ◽  
Author(s):  
Shanbao Chen ◽  
Fang Wu ◽  
Qiongyu Li ◽  
Huasheng Sun ◽  
Junfei Ding ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optical Applications

Two-dimensional (2D) ferromagnetic (FM) semiconductors with a direct electric band gap have recently drawn much attention due to their promising potential for spintronic and magneto-optical applications.

scholarly journals Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
E. Kasper ◽  
M. Oehme ◽  
T. Arguirov ◽  
J. Werner ◽  
M. Kittler ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Forward Bias ◽  
Laser Wavelength ◽  
Carrier Injection ◽  
Direct Band Gap ◽  
Layer Sequence ◽  
Impurity Interaction ◽  
Direct Band ◽  
Band Gap Narrowing

Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

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