Control of Al2O3/InAlN interface by two-step atomic layer deposition combined with high-temperature annealing

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EF06 ◽  
Author(s):  
Takuma Nakano ◽  
Masahito Chiba ◽  
Masamichi Akazawa
Keyword(s):  
High Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
High Temperature Annealing ◽  
Layer Deposition

scholarly journals High-temperature resistant polypropylene films enhanced by atomic layer deposition

Nano Express ◽  
2021 ◽  
Vol 2 (1) ◽  
pp. 010025
Author(s):  
Xudong Wu ◽  
Shaokai Tang ◽  
Guanghui Song ◽  
Zihan Zhang ◽  
Daniel Q Tan
Keyword(s):  
High Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Polypropylene Films

scholarly journals High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2434
Author(s):  
Aaron J. Austin ◽  
Elena Echeverria ◽  
Phadindra Wagle ◽  
Punya Mainali ◽  
Derek Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Buffer Layers ◽  
X Ray ◽  
1D Nanostructures ◽  
Layer Deposition ◽  
Silica Nanosprings

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures.

Stabilizing a high-temperature electrochemical silver-carbonate CO2 capture membrane by atomic layer deposition of a ZrO2 overcoat

2016 ◽  
Vol 52 (63) ◽  
pp. 9817-9820 ◽  
Author(s):  
Peng Zhang ◽  
Jingjing Tong ◽  
Youngseok Jee ◽  
Kevin Huang
Keyword(s):  
High Temperature ◽  
Atomic Layer Deposition ◽  
High Temperatures ◽  
Co2 Capture ◽  
High Selectivity ◽  
Atomic Layer ◽  
Dual Phase ◽  
High Flux ◽  
Silver Carbonate ◽  
Layer Deposition

A high-selectivity and high-flux electrochemical silver-carbonate dual-phase membrane was coated with a nanoscaled ZrO2 layer by atomic layer deposition (ALD) for stable CO2 capture at high temperatures (≥800 °C).

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