Quantitative Evaluation of Dopant Concentration in Shallow Silicon p–n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA04 ◽  
Author(s):  
Leonid Bolotov ◽  
Koichi Fukuda ◽  
Hiroshi Arimoto ◽  
Tetsuya Tada ◽  
Toshihiko Kanayama
Keyword(s):  
Quantitative Evaluation ◽  
Scanning Probe Microscopy ◽  
Dopant Concentration ◽  
Tunneling Current ◽  
Scanning Probe ◽  
Probe Microscopy

Scanning Probe Microscopy

2021 ◽  
pp. 745-802
Author(s):  
Kannan M. Krishnan
Keyword(s):  
Scanning Probe Microscopy ◽  
Tunneling Current ◽  
Force Sensor ◽  
Dynamic Imaging ◽  
Scanning Probe ◽  
Constant Current ◽  
Probe Microscopy ◽  
Adsorbed Atoms ◽  
Intermittent Contact ◽  
Local Electronic Structure

Scanning probe microscopy (SPM) scans a fine tip close to a surface and measures the tunneling current (STM) or force (SFM), based on many possible tip-surface interactions. STM provides atomic resolution imaging, or the local electronic structure (spectroscopy) as a function of bias voltage, and is also used to manipulate adsorbed atoms on a clean surface. STM operates in two modes— constant current or height—and requires a conducting specimen. SFM uses a cantilever (force sensor) to measure short range (< 1 nm) chemical, and a variety of long-range (< 100 nm) forces, depending on the tip and the specimen; a conducting specimen is not required. In static mode, the tip height is controlled to maintain a constant force, and measure surface topography. In dynamic mode, changes in the vibrational properties of the cantilever are measured using frequency, amplitude, or phase modulation as feedback to control the tip-surface distance and form the image. Dynamic imaging includes contact and non-contact modes, but intermittent contact or tapping mode is common. SPMs measure properties (optical, acoustic, conductance, electrochemical, capacitance, thermal, magnetic, etc.) using appropriate tips, and find applications in the physical and life sciences. They are also used for nanoscale lithography.

scholarly journals Multi-Channel Exploration of O Adatom on TiO2(110) Surface by Scanning Probe Microscopy

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1506
Author(s):  
Huan Fei Wen ◽  
Yasuhiro Sugawara ◽  
Yan Jun Li
Keyword(s):  
Charge Transfer ◽  
Scanning Probe Microscopy ◽  
Contact Potential Difference ◽  
Tunneling Current ◽  
Potential Difference ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Contact Potential ◽  
Probe Microscopy ◽  
Local Contact

We studied the O2 dissociated state under the different O2 exposed temperatures with atomic resolution by scanning probe microscopy (SPM) and imaged the O adatom by simultaneous atomic force microscopy (AFM)/scanning tunneling microscopy (STM). The effect of AFM operation mode on O adatom contrast was investigated, and the interaction of O adatom and the subsurface defect was observed by AFM/STM. Multi-channel exploration was performed to investigate the charge transfer between the adsorbed O and the TiO2(110) by obtaining the frequency shift, tunneling current and local contact potential difference at an atomic scale. The tunneling current image showed the difference of the tunneling possibility on the single O adatom and paired O adatoms, and the local contact potential difference distribution of the O-TiO2(110) surface institutively revealed the charge transfer from TiO2(110) surface to O adatom. The experimental results are expected to be helpful in investigating surface/interface properties by SPM.

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

Alternating Plane-View and Cross-Section Scanning Capacitance Microscope Technique to Reveal Various Implant Issue

2007 ◽  
Author(s):  
Tsan-Chang Chuang ◽  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Jin-Hong Chou ◽  
...  
Keyword(s):  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Dopant Concentration ◽  
Scanning Probe ◽  
Correct Selection ◽  
Cross Sectional ◽  
Root Cause ◽  
Excellent Spatial Resolution ◽  
Microscope Technique ◽  
Plane View

Abstract Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve the goal due to inherent "plane" trait. On top of that, deeper concentration profile just like deep N-well is also one of restrictions to use. For representing above contents more clearly, this paper presents a few cases that demonstrate the alternated and optimized application of PV-SCM and X-SCM. The case studies concern Joint Test Action Group failure and stand-by failure. These cases illustrate that the correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnose the failure mechanism. Alternating and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide corrective actions that suit local circumstance of defects and identify the root cause.

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