Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DD02 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Sang-Uk Park ◽  
Jung-Deuk Bok ◽  
Yi-Jung Jung ◽  
...  
Keyword(s):  
Conduction Mechanism ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

2011 ◽  
Vol 50 (4) ◽  
pp. 04DD02 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Sang-Uk Park ◽  
Jung-Deuk Bok ◽  
Yi-Jung Jung ◽  
...  
Keyword(s):  
Conduction Mechanism ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

Design of the Technological Flow to Produce a Planar Variant of the Nothing on Insulator Device and its Tunneling Conduction

2019 ◽  
Vol 60 ◽  
pp. 33-41 ◽  
Author(s):  
Cristian Ravariu ◽  
Elena Manea ◽  
Catalin Parvulescu ◽  
Dan Mihaiescu
Keyword(s):  
Conduction Mechanism ◽  
Metal Structure ◽  
Static Characteristics ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Inversion Channel ◽  
Tunneling Conduction ◽  
Metal Insulator Metal ◽  
Dual Gate ◽  
Effect Transistor

This paper starts from the leakage currents through the gates of the last MOSFET generations and propose a related structure, which can be inherently included as parasitic device in any future MOSFET sub-22nm or can be deliberated fabricated to induce its own behavior. This structure is abbreviated in this paper by p-NOI (planar-Nothing On Insulator) and it can be simply produced by the planar Si-technology. Its concept is derived from the NOI (Nothing On Insulator) concept, but replaces the vacuum with oxide. The conduction mechanism is based on a thin oxide tunneling, under the Fowler-Nordheim's law. The current flow occurs from a source to a lateral drain, without an inversion channel and without a lateral pn junction, as in the MOSFET case. A similar investigated device by other authors is a fabricated MIM (Metal-Insulator-Metal) structure, which is compared with the actual p-NOI simulation. Finally, a dual gate p-NOI device is investigated. The depletion-accumulation transition is captured by the static I-V static characteristics. Using two steps of oxide, of 2nm and 10nm, a second planar-NOI structure with three terminals was studied. The (G) terminal is associated to a Gate and the (S) terminal is associated to a Source of a Field Effect Transistor. Some particular applications as diode or transistor are emphasized versus the gate biasing regime.

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

2014 ◽  
Vol 61 (8) ◽  
pp. 2619-2627 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
Sung-Kyu Kwon ◽  
Kwang-Seok Jeong ◽  
Sung-Kwen Oh ◽  
Sun-Ho Oh ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Oxygen Vacancies ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

Temperature Dependent Electrical and Dielectrics Properties of Metal-Insulator-Metal Capacitors with Alumina-Silicone Nanolaminate Films

2014 ◽  
Vol 1675 ◽  
pp. 169-176
Author(s):  
Santosh K. Sahoo ◽  
Rakhi P. Patel ◽  
Colin A. Wolden
Keyword(s):  
Conduction Mechanism ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Metal Structures ◽  
Voltage Coefficient ◽  
Metal Insulator Metal ◽  
Potential Applications ◽  
Electrical And Dielectric Properties

ABSTRACTAlumina-silicone hybrid nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. Temperature dependent electrical and dielectric properties of the nanolaminate dielectric films in metal-insulator-metal structures are taken in the range of 200- 340 K to better asses their potential applications for different devices. It is observed that the frequency dependent dielectric constant (εr) and ac conductivity (σac) increase with the temperature. Both quadratic (α) and linear (β) voltage coefficient of capacitance (VCC) increases as the temperature increases. The temperature co-efficient of capacitance (TCC) decreases from 894 to 374 ppm/K as the Al2O3 composition increases in the alumina/silicone nanolaminates. Activation energy (Ea) for hopping conduction mechanism varies from 0.011 eV to 0.008 eV as the alumina composition increases from 50 to 83.3%.

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Hyperspectral Molecular Orientation Mapping in Metamaterials

2021 ◽  
Vol 11 (4) ◽  
pp. 1544
Author(s):  
Meguya Ryu ◽  
Yoshiaki Nishijima ◽  
Shinya Morimoto ◽  
Naoki To ◽  
Tomoki Hashizume ◽  
...  
Keyword(s):  
Molecular Orientation ◽  
Field Enhancement ◽  
Chemical Mapping ◽  
Metal Insulator ◽  
Orientation Mapping ◽  
Metal Insulator Metal ◽  
Finger Printing ◽  
Thermal Emitter ◽  
Ir Bands ◽  
Sub Wavelength

The four polarisation method is adopted for measurement of molecular orientation in dielectric nanolayers of metal-insulator-metal (MIM) metamaterials composed of gold nanodisks on polyimide and gold films. Hyperspectral mapping at the chemical finger printing spectral range of 4–20 μμm was carried out for MIM patterns of 1–2.5 μμm period (sub-wavelength). Overlay images taken at 0,π4,π2,3π4 orientation angles and subsequent baseline compensation are shown to be critically important for the interpretation of chemical mapping results and reduction of spurious artefacts. Light field enhancement in the 60-nm-thick polyimide (I in MIM) was responsible for strong absorption at the characteristic polyimide bands. Strong absorbance A at narrow IR bands can be used as a thermal emitter (emittance E=1−R), where R is the reflectance and A=1−R−T, where for optically thick samples the transmittance is T=0.

Nonstoichiometric Nanolayered Ni/NiO/Al2O3/CrAu Metal–Insulator–Metal Infrared Rectenna

2021 ◽  
Vol 4 (3) ◽  
pp. 2470-2475 ◽  
Author(s):  
Ayendra Weerakkody ◽  
Amina Belkadi ◽  
Garret Moddel
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal
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