Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material

2011 ◽  
Vol 50 (2R) ◽  
pp. 024102 ◽  
Author(s):  
Friso Jedema ◽  
Micha in `t Zandt ◽  
Rob Wolters ◽  
Dirk Gravesteijn
2011 ◽  
Vol 50 (2) ◽  
pp. 024102 ◽  
Author(s):  
Friso Jedema ◽  
Micha in `t Zandt ◽  
Rob Wolters ◽  
Dirk Gravesteijn

2012 ◽  
Vol 101 (12) ◽  
pp. 122108 ◽  
Author(s):  
Cheng Peng ◽  
Liangcai Wu ◽  
Feng Rao ◽  
Zhitang Song ◽  
Pingxiong Yang ◽  
...  

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  

2010 ◽  
Vol 10 (11) ◽  
pp. 7040-7044 ◽  
Author(s):  
Yifeng Gu ◽  
Ting Zhang ◽  
Zhitang Song ◽  
Bo Liu ◽  
Songlin Feng

2017 ◽  
Vol 5 (14) ◽  
pp. 3592-3599 ◽  
Author(s):  
Linggang Zhu ◽  
Zhen Li ◽  
Jian Zhou ◽  
Naihua Miao ◽  
Zhimei Sun

Oxygen in GeTe induces the formation of defect clusters in the crystallization process of the amorphous state, which slows down the crystallization speed and improves the data retention of phase change material GeTe.


2007 ◽  
Vol 46 (No. 25) ◽  
pp. L602-L604 ◽  
Author(s):  
Ting Zhang ◽  
Zhitang Song ◽  
Feng Wang ◽  
Bo Liu ◽  
Songlin Feng ◽  
...  

2018 ◽  
Vol 49 (6) ◽  
pp. 509-528 ◽  
Author(s):  
Orawan Aumporn ◽  
Belkacem Zeghmati ◽  
Xavier Chesneau ◽  
Serm Janjai

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