scholarly journals Insight into the role of oxygen in the phase-change material GeTe

2017 ◽  
Vol 5 (14) ◽  
pp. 3592-3599 ◽  
Author(s):  
Linggang Zhu ◽  
Zhen Li ◽  
Jian Zhou ◽  
Naihua Miao ◽  
Zhimei Sun
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Crystallization Process ◽  
Amorphous State ◽  
Data Retention ◽  
Defect Clusters ◽  
Crystallization Speed ◽  
Change Material ◽  
Insight Into

Oxygen in GeTe induces the formation of defect clusters in the crystallization process of the amorphous state, which slows down the crystallization speed and improves the data retention of phase change material GeTe.

The Role of Si and Sb in the Si-Sb-Te Phase-change Material

2011 ◽  
Vol 1295 ◽  
Author(s):  
Liangcai Wu ◽  
Xilin Zhou ◽  
Zhitang Song ◽  
Henan Ni ◽  
Feng Rao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Materials ◽  
Crystallization Process ◽  
Cmos Technology ◽  
Data Retention ◽  
Si Content ◽  
Device Properties ◽  
Change Material

ABSTRACTSb-rich Si-Sb-Te phase change materials with different Si contents were proposed and fabricated, and the role of Si and Sb in the Si-Sb-Te alloys was discussed. The resistance-temperature and retention properties of the Sb-rich Si-Sb-Te alloys were studied. Devices based on the Sb-rich Si-Sb-Te alloys were fabricated by a 0.18 μm CMOS technology and device properties were studied by pulsed mode resistance-voltage (R-V) measurements. Experimental results show that the crystallization temperature and data retention ability of the Sb-rich Si-Sb-Te alloys were obviously improved with increasing Si content, but the electrical properties degenerate if too much Si was added. Sb is helpful to promote the crystallization process, but excessive Sb decreases the thermal stability. So, in order to obtain practicable Sb-rich Si-Sb-Te phase change materials, suitable Si and Sb contents are required to balance the device performances between electrical switching property and thermal stability or data retention ability.

Insight into the role of nitrogen in the phase-change material Sb

2019 ◽  
Vol 52 (45) ◽  
pp. 455107 ◽  
Author(s):  
Yuemei Sun ◽  
Chengtao Yu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Yifeng Hu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Change Material ◽  
Insight Into

W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention

2012 ◽  
Vol 101 (12) ◽  
pp. 122108 ◽  
Author(s):  
Cheng Peng ◽  
Liangcai Wu ◽  
Feng Rao ◽  
Zhitang Song ◽  
Pingxiong Yang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Retention ◽  
Trade Off ◽  
Change Material

Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material

2011 ◽  
Vol 50 (2R) ◽  
pp. 024102 ◽  
Author(s):  
Friso Jedema ◽  
Micha in `t Zandt ◽  
Rob Wolters ◽  
Dirk Gravesteijn
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Retention Time ◽  
Data Retention ◽  
Change Material

Design of mark shape by controlling crystallization speed of an In3SbTe2 phase-change material

1994 ◽  
pp. 1047-1050
Author(s):  
Atsuko Naruse ◽  
Hisashi Andoh ◽  
Isao Ikuta ◽  
Hiroyuki Minemura ◽  
Yoshio Sato
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Crystallization Speed ◽  
Change Material

Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Multilevel Data ◽  
Data Retention ◽  
High Data ◽  
Fast Speed ◽  
Change Material

Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe

2010 ◽  
Vol 10 (11) ◽  
pp. 7040-7044 ◽  
Author(s):  
Yifeng Gu ◽  
Ting Zhang ◽  
Zhitang Song ◽  
Bo Liu ◽  
Songlin Feng
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Retention ◽  
Good Data ◽  
Change Material ◽  
Low Consumption
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