Observation of a Pseudogap in the Vicinity of the Metal–Insulator Transition in the Perovskite-type Vanadium Oxides Nd1−xSrxVO3

2018 ◽  
Vol 87 (2) ◽  
pp. 024708
Author(s):  
Shintaro Yamamoto ◽  
Daiki Ootsuki ◽  
Daiya Shimonaka ◽  
Daisuke Shibata ◽  
Kenjiro Kodera ◽  
...  
Keyword(s):  
Vanadium Oxides ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Perovskite Type

Magnetic-field-induced metal-insulator transition in perovskite-type manganese oxides

1997 ◽  
Vol 237-238 ◽  
pp. 6-10 ◽  
Author(s):  
Y. Tomioka ◽  
A. Asamitsu ◽  
H. Kuwahara ◽  
Y. Moritomo ◽  
M. Kasai ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Manganese Oxides ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Perovskite Type

Metal–insulator transition induced by electronic and structural modulations in oxygen-deficient perovskite-type TbBaCo2O5.5

2006 ◽  
Vol 243 (8) ◽  
pp. 1813-1822 ◽  
Author(s):  
M. Hidaka ◽  
M. Soejima ◽  
R. P. Wijesundera ◽  
M. Soda ◽  
M. Sato ◽  
...  
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Perovskite Type

Effect of Co3+ Ion on Metal-Insulator Transition in (La0.1Ca0.9)(Mn1-xCox)O3

1998 ◽  
Vol 547 ◽  
Author(s):  
Hideki Taguchi
Keyword(s):  
Rietveld Analysis ◽  
Insulator Transition ◽  
Ion Content ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Type Semiconductor ◽  
Orthorhombic Perovskite ◽  
The Difference ◽  
Perovskite Type ◽  
Metallic Region

AbstractOrthorhombic perovskite-type (La0.1Ca0.9)(Mn1-xCox)O3 was synthesized in the range 0.00 ≤ x ≤ 0.08. The Rietveld analysis indicates that the (Mn, Co)-O(1 and 2) distances are independent of the composition (x). Measurements of the electrical resistivity (ρ) and the Seebeck coefficient (α) indicate that (La0.1Ca0.9)(Mn1-xCox)O3 is an n-type semiconductor at the low temperature. At the high temperature, (La0.1Ca0.9)(Mn1-xCox)O3 exhibits a metal-insulator transition in the range 0.0 ≤ x ≤ 0.04. The metal-insulator transition temperature (Tt) increases with increasing the Co3+ ion content, while dρ/dT in the metallic region decreases with increasing the Co3+ ion content. The variation of Ea and T+ is explained by the difference in the electronegativity between Mn and Co atoms. The variation of dρ/dT in the metallic region is explained by the increase in the collective o bond.

scholarly journals Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
Juan Gabriel Ramirez ◽  
Thomas Saerbeck ◽  
Siming Wang ◽  
J. Trastoy ◽  
M. Malnou ◽  
...  
Keyword(s):  
Vanadium Oxides ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Effect Of Disorder

scholarly journals On the Problem of Metal-Insulator Transitions in Vanadium Oxides

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
A. L. Pergament ◽  
G. B. Stefanovich ◽  
N. A. Kuldin ◽  
A. A. Velichko
Keyword(s):  
Vanadium Oxides ◽  
Insulator Transition ◽  
Temperature Transition ◽  
Metal Insulator Transition ◽  
Doped Semiconductors ◽  
Metal Insulator ◽  
Metal Compounds ◽  
Vanadium Sesquioxide ◽  
Paramagnetic Metal ◽  
Heavily Doped

The problem of metal-insulator transition is considered. It is shown that the Mott criterion aB(nc)1/3≈0.25 is applicable not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as vanadium oxides (particularly, VO2 and V2O3). The low-temperature transition (“paramagnetic metal—antiferromagnetic insulator”) in vanadium sesquioxide is described on the basis of this concept in terms of an intervening phase, between metal and insulator states, with divergent dielectric constant and effective charge carrier mass. Recent communications concerning a possible “metal-insulator transition” in vanadium pentoxide are also discussed.

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