scholarly journals Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects

2015 ◽  
Vol 91 (20) ◽  
Author(s):  
Juan Gabriel Ramirez ◽  
Thomas Saerbeck ◽  
Siming Wang ◽  
J. Trastoy ◽  
M. Malnou ◽  
...  
2018 ◽  
Vol 87 (2) ◽  
pp. 024708
Author(s):  
Shintaro Yamamoto ◽  
Daiki Ootsuki ◽  
Daiya Shimonaka ◽  
Daisuke Shibata ◽  
Kenjiro Kodera ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
A. L. Pergament ◽  
G. B. Stefanovich ◽  
N. A. Kuldin ◽  
A. A. Velichko

The problem of metal-insulator transition is considered. It is shown that the Mott criterion aB(nc)1/3≈0.25 is applicable not only to heavily doped semiconductors but also to many other materials, including some transition-metal compounds, such as vanadium oxides (particularly, VO2 and V2O3). The low-temperature transition (“paramagnetic metal—antiferromagnetic insulator”) in vanadium sesquioxide is described on the basis of this concept in terms of an intervening phase, between metal and insulator states, with divergent dielectric constant and effective charge carrier mass. Recent communications concerning a possible “metal-insulator transition” in vanadium pentoxide are also discussed.


2004 ◽  
Vol 114 ◽  
pp. 277-281 ◽  
Author(s):  
J. Wosnitza ◽  
J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
J. A. Schlueter ◽  
...  

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