scholarly journals Mechanisms of alpha particle induced soft errors in nanoscale static random access memories

2020 ◽  
Vol 69 (13) ◽  
pp. 136103
Author(s):  
Zhan-Gang Zhang ◽  
Bing Ye ◽  
Qing-Gang Ji ◽  
Jin-Long Guo ◽  
Kai Xi ◽  
...  
Keyword(s):  
Alpha Particle ◽  
Soft Errors ◽  
Random Access ◽  
Static Random Access Memories

Modelling of Alpha Particle Induced Soft Errors in Dynamic Random Access Memories (DRAM)

1990 ◽  
Vol 31 (1-4) ◽  
pp. 101-105
Author(s):  
A.K.M.M. Haque ◽  
D.S. Stevens ◽  
I.A.M. Al-Affan
Keyword(s):  
Alpha Particle ◽  
Soft Errors ◽  
Random Access

Morphology of uranium precipitates in silicon

1990 ◽  
Vol 48 (4) ◽  
pp. 648-649
Author(s):  
V. C. Kannan ◽  
A. J. Filo ◽  
I. G. Brown
Keyword(s):  
Alpha Particle ◽  
Soft Errors ◽  
Random Access ◽  
Memory Cell ◽  
Alpha Particles ◽  
Oxide Semiconductor ◽  
Track Length ◽  
Contrast Imaging ◽  
Deposited Energy ◽  
Diffraction Patterns

Soft errors induced by incident alpha particles have been observed in dynamic Metal-Oxide- Semiconductor Random Access Memory (MOS RAMs), charge coupled devices (CCDs), static MOS RAMs and in bipolar RAMS. The focus of attention has been the occurrence of soft errors as a result of alpha particle decay of uranium present even in trace amounts, typically a few ppm (parts per million), in the silicon substrate along with the devices as well as the packaging material. A study of segregation of uranium in silicon is of special interest since a single alpha particle of approximately 40 MeV that has a track length of about 20 μ in silicon can give rise to nearly 106 electron-hole pairs if all the deposited energy is converted to the generation of excess carriers. If these excess carriers are developed in a critical volume depending upon the density of devices in a product, the effect can be large enough to limit the mean time of failure to a few days or weeks for a 64k memory cell. In order to study the diffusion and segregation characteristics of uranium in silicon, uranium was deliberately ion implemented into bare silicon to a dose of 1014/cm2 and subsequently annealed at several temperatures often encountered in device processing. In this paper, we present TEM results especially pertaining to the morphology of uranium precipitates in silicon. Conventional microstructural observations, using bright field (BF) imaging, stereographic projection analysis using electron diffraction patterns, and projected directions of the precipitate with respect to matrix reflection from silicon onto a stereogram, and moire patterns using phase contrast imaging, were used to determine the morphology of fine uranium precipitates in ion implanted and annealed samples.

Modelling of Alpha Particle Induced Soft Errors in Dynamic Random Access Memories (DRAM)

1990 ◽  
Vol 31 (1-4) ◽  
pp. 101-105
Author(s):  
A.K.M.M. Haque ◽  
D.S. Stevens ◽  
I.A.M. Al-Affan
Keyword(s):  
Alpha Particle ◽  
Soft Errors ◽  
Random Access

Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories

2007 ◽  
Author(s):  
Kevin M. Warren ◽  
Jeffrey D. Wilkinson ◽  
Scott Morrison ◽  
Robert A. Weller ◽  
Mark E. Porter ◽  
...  
Keyword(s):  
Soft Errors ◽  
Random Access ◽  
Static Random Access Memories

Soft errors in commercial off-the-shelf static random access memories

2016 ◽  
Vol 32 (1) ◽  
pp. 013006
Author(s):  
L Dilillo ◽  
G Tsiligiannis ◽  
V Gupta ◽  
A Bosser ◽  
F Saigne ◽  
...  
Keyword(s):  
Soft Errors ◽  
Random Access ◽  
Static Random Access Memories ◽  
Commercial Off The Shelf

Alpha-Particle-Induced Soft Errors and 64K Dynamic RAM Design Interaction

1980 ◽  
Author(s):  
R. J. McPartland ◽  
J. T. Nelson ◽  
W. R. Huber
Keyword(s):  
Alpha Particle ◽  
Soft Errors

scholarly journals III–V-on-Si Photonic Crystal Nanocavity Laser Technology for Optical Static Random Access Memories

2016 ◽  
Vol 22 (6) ◽  
pp. 295-304 ◽  
Author(s):  
Theonitsa Alexoudi ◽  
Dimitrios Fitsios ◽  
Alexandre Bazin ◽  
Paul Monnier ◽  
Rama Raj ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Random Access ◽  
Laser Technology ◽  
Static Random Access Memories

Low-Power Dynamic Memory Word Line Decoding for Static Random Access Memories

2008 ◽  
Vol 43 (11) ◽  
pp. 2524-2532 ◽  
Author(s):  
Giby Samson ◽  
Nagaraj Ananthapadmanabhan ◽  
Sayeed A. Badrudduza ◽  
Lawrence T. Clark
Keyword(s):  
Low Power ◽  
Random Access ◽  
Dynamic Memory ◽  
Power Dynamic ◽  
Static Random Access Memories ◽  
Memory Word
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