Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

2003 ◽  
Vol 83 (6) ◽  
pp. 1157-1159 ◽  
Author(s):  
R. Aleksiejūnas ◽  
M. Sūdžius ◽  
T. Malinauskas ◽  
J. Vaitkus ◽  
K. Jarašiūnas ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Surface Recombination ◽  
Free Carrier ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Nitridation by NO Or N2O of Si-SiO2 Interfaces

1999 ◽  
Vol 567 ◽  
Author(s):  
A. P. Caricato ◽  
F. Cazzaniga ◽  
G. F. Cerofolini ◽  
B. Crivelli ◽  
M. L. Polignano ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Nature ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Oxide Surface ◽  
Complementary Information ◽  
X Ray ◽  
Recombination Velocity ◽  
Foreign Species

ABSTRACTX-ray photoelectron spectroscopy (XPS) and photocurrent measurements for the determination of surface recombination velocity provide complementary information on the structure of the Si-SiO2 interface, being sensitive to the chemical nature of foreign species at the interface the former, and to intrinsic defects the latter. The comparison of the XPS N(1s) peaks determined for the Si-Si0 2 interfaces nitrided in NO or N2O ambients is useful to identify the species responsible for the broadening of the peak. In fact, nitridation by NO is mainly responsible for the formation of Si3N moieties at the silicon surface in which silicon atoms are partially oxidized; while nitridation by N2O proceeds with the oxidation of Si – Si backbonds to Si – N bonds, thus resulting in the formation of N(Si(O-)3)3 groups embedded in the oxide. Surface recombination velocity by photocurrent measurements gives evidence that nitridation in N2O is associated with an appreciable co-oxidation, while nitridation in NO is mainly associated with the passivation of interface states. Furthermore N2O and NO nitridation are responsible for different morphologies of the nitrided layers.

scholarly journals Determination of surface recombination velocity and bulk lifetime in detector grade silicon and germanium crystals

1994 ◽  
Vol 41 (4) ◽  
pp. 1026-1030 ◽  
Author(s):  
N. Derhacobian ◽  
P. Fine ◽  
J.T. Walton ◽  
Y.K. Wong ◽  
C.S. Rossington ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Grade Silicon ◽  
Silicon And Germanium ◽  
Recombination Velocity
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