scholarly journals Band structure model of modified Ge for optical device application

2018 ◽  
Vol 67 (19) ◽  
pp. 198502
Author(s):  
Yang Wen ◽  
Song Jian-Jun ◽  
Ren Yuan ◽  
Zhang He-Ming
Keyword(s):  
Band Structure ◽  
Structure Model ◽  
Optical Device ◽  
Device Application ◽  
Band Structure Model

Nitride band-structure model in a quantum well laser simulator

2008 ◽  
Vol 40 (5-6) ◽  
pp. 295-299 ◽  
Author(s):  
Anusha Venkatachalam ◽  
P. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

Band structure model of Ge-C alloy films prepared from tetraethylgermanium in A R.F. discharge

1991 ◽  
Vol 137-138 ◽  
pp. 875-878 ◽  
Author(s):  
Jacek Tyczkowski ◽  
Ewa Odrobina ◽  
Maciej Gazicki ◽  
Fethi Olcaytug
Keyword(s):  
Band Structure ◽  
Structure Model ◽  
Alloy Films ◽  
Band Structure Model

Determination of the spin-splitting factor gc for Landau levels from the first three harmonics in the de Haas–van Alphen effect

1976 ◽  
Vol 54 (24) ◽  
pp. 2445-2455 ◽  
Author(s):  
A. V. Gold ◽  
P. W. Schmor
Keyword(s):  
Band Structure ◽  
Fermi Surface ◽  
Landau Levels ◽  
Spin Splitting ◽  
Structure Model ◽  
The Third ◽  
Splitting Factor ◽  
Dimensionless Ratio ◽  
Band Structure Model

A simple and convenient method is proposed for extracting the spin-splitting factors gc associated with extremal orbits around the Fermi surface from knowledge of the amplitudes Ar of the first three harmonics in the de Haas–van Alphen effect. In the approach suggested here, the quantity of prime interest is the dimensionless ratio α = A22/A1A3, which is independent of both the detailed shape of the Fermi surface and the Dingle temperature. Information about the relative phases of the harmonics allows corrections to be made for the Shoenberg magnetic interaction.In a first application of this three-harmonic method, the dHνA waveform has been studied in disk-shaped samples of Pb using a sensitive magnetoresistive-probe technique, and gc has been determined for the orbits ν and ν′ on the third-zone electron surface. We have also attempted to calculate the splitting factors within the framework of the 4 OPW band-structure model of Anderson, O'Sullivan, and Schirber. However, the simplification of using 4 OPW's throughout the Brillouin zone is found to lead to serious errors and inconsistencies as far as these differential magnetic quantities are concerned.

Crystallinity and Optoelectronic Properties of μc-SiC:H

1992 ◽  
Vol 283 ◽  
Author(s):  
F. Demichelis ◽  
G. Crovini ◽  
c. Osenga ◽  
C. F. Pirri ◽  
E. Tresso ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Structure ◽  
Carbon Content ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Degree Of Crystallinity ◽  
Optical Transitions ◽  
Structure Model ◽  
The Degree Of Crystallinity ◽  
Band Structure Model

ABSTRACTSamples of μc-Si1-xCx:H with different degree of crystallinity and different carbon content were deposited by Plasma Enhanced Chemical Vapor Deposition and characterized by means of optical, electrical and structural measurements. The correlation between the degree of crystallinity and the mechanism of conductivity and optical transitions in both amorphous and crystalline phases and at the crystalline-amorphous interfaces is reported and discussed in terms of a band structure model.

Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices

2015 ◽  
Vol 29 (16) ◽  
pp. 1550107 ◽  
Author(s):  
Youcef Belhadji ◽  
Benyounes Bouazza ◽  
Fateh Moulahcene ◽  
Nordine Massoum
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
High Temperature ◽  
Electron Transport ◽  
Band Structure ◽  
Monte Carlo Analysis ◽  
Structure Model ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo ◽  
Band Structure Model

In a comparative framework, an ensemble Monte Carlo was used to elaborate the electron transport characteristics in two different silicon carbide (SiC) polytypes 3C-SiC and 4H-SiC. The simulation was performed using three-valley band structure model. These valleys are spherical and nonparabolic. The aim of this work is to forward the trajectory of 20,000 electrons under high-flied (from 50 kV to 600 kV) and high-temperature (from 200 K to 700 K). We note that this model has already been used in other studies of many Zincblende or Wurtzite semiconductors. The obtained results, compared with results found in many previous studies, show a notable drift velocity overshoot. This last appears in subpicoseconds transient regime and this overshoot is directly attached to the applied electric field and lattice temperature.

Drift mobility and Hall coefficient factor of holes in germanium and silicon

1978 ◽  
Vol 56 (3) ◽  
pp. 364-372 ◽  
Author(s):  
H. Nakagawa ◽  
S. Zukotynski
Keyword(s):  
Experimental Data ◽  
Band Structure ◽  
Hall Coefficient ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Drift Mobility ◽  
Structure Model ◽  
Optical Phonon Scattering ◽  
Band Structure Model ◽  
Good Agreement

The drift mobility and the Hall coefficient factor are calculated using the Kane band structure model without approximations. Acoustic and optical phonon scattering and also impurity scattering are considered. The effects of light and heavy holes on the drift and the Hall mobility are discussed. The results for the drift mobility agree with experimental data both for Ge and Si. The results for the Hall coefficient factor are in good agreement for Si, but in the case of Ge, the agreement is only fair.

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