Drift mobility and Hall coefficient factor of holes in germanium and silicon

1978 ◽  
Vol 56 (3) ◽  
pp. 364-372 ◽  
Author(s):  
H. Nakagawa ◽  
S. Zukotynski
Keyword(s):  
Experimental Data ◽  
Band Structure ◽  
Hall Coefficient ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Drift Mobility ◽  
Structure Model ◽  
Optical Phonon Scattering ◽  
Band Structure Model ◽  
Good Agreement

The drift mobility and the Hall coefficient factor are calculated using the Kane band structure model without approximations. Acoustic and optical phonon scattering and also impurity scattering are considered. The effects of light and heavy holes on the drift and the Hall mobility are discussed. The results for the drift mobility agree with experimental data both for Ge and Si. The results for the Hall coefficient factor are in good agreement for Si, but in the case of Ge, the agreement is only fair.

Hydrodynamic Simulation of Drift Mobility in N-Hg0.8Cd0.2Te

2011 ◽  
Vol 312-315 ◽  
pp. 122-126
Author(s):  
Mebarka Daoudi ◽  
Abderrahmane Belghachi ◽  
Luca Varani ◽  
Christophe Palermo
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Dominant Role ◽  
Impurity Scattering ◽  
Drift Mobility ◽  
Scattering Mechanism ◽  
Hydrodynamic Simulation ◽  
Monte Carlo Calculations ◽  
Ionized Impurity Scattering ◽  
Good Agreement

In this paper, the transport properties of Hg0.8Cd0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as functions of the electric field strength. Comparison is made with Monte Carlo calculations and experimental results. The obtained velocity-field curve is in good agreement with reported experimental data.

Nitride band-structure model in a quantum well laser simulator

2008 ◽  
Vol 40 (5-6) ◽  
pp. 295-299 ◽  
Author(s):  
Anusha Venkatachalam ◽  
P. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

scholarly journals Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Safi Altunöz ◽  
Hüseyin Çelik ◽  
Mehmet Cankurtaran
Keyword(s):  
Quantum Wells ◽  
Applied Voltage ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Vertical Transport ◽  
Interface Roughness ◽  
Polar Optical Phonon ◽  
Optical Phonon Scattering ◽  
Interface Roughness Scattering ◽  
The Difference

AbstractThe mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga1−y AlyAs (0 ≤ y ≤ 0:26) linearly graded barriers between the n+-GaAs contacts and the Ga0:74Al0:26As central barrier, which contain N w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N w=0 and 2, whereas ionized impurity scattering is dominant in the samples with N w=4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N w=4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.

scholarly journals Band structure model of modified Ge for optical device application

2018 ◽  
Vol 67 (19) ◽  
pp. 198502
Author(s):  
Yang Wen ◽  
Song Jian-Jun ◽  
Ren Yuan ◽  
Zhang He-Ming
Keyword(s):  
Band Structure ◽  
Structure Model ◽  
Optical Device ◽  
Device Application ◽  
Band Structure Model

Band structure model of Ge-C alloy films prepared from tetraethylgermanium in A R.F. discharge

1991 ◽  
Vol 137-138 ◽  
pp. 875-878 ◽  
Author(s):  
Jacek Tyczkowski ◽  
Ewa Odrobina ◽  
Maciej Gazicki ◽  
Fethi Olcaytug
Keyword(s):  
Band Structure ◽  
Structure Model ◽  
Alloy Films ◽  
Band Structure Model

Electronic and optical properties of ZnSxSe1−x alloys

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
Zhenbao Feng ◽  
Haiquan Hu ◽  
Shouxin Cui
Keyword(s):  
Experimental Data ◽  
Optical Properties ◽  
Band Structure ◽  
Density Of States ◽  
Absorption Edge ◽  
First Principles ◽  
Semiconductor Alloys ◽  
Electronic And Optical Properties ◽  
Spectral Peaks ◽  
Good Agreement

AbstractA series of calculations from first principles have been carried out to study structural, electronic, and optical properties of ZnSxSe1−x alloys. Our results show that the lattice constant scales linearly with sulfur composition. The imaginary parts of the dielectric function are calculated, which are in good agreement with the experimental data. We have also interpreted the origin of the spectral peaks on the basis of band structure and density of states. Additionally, we find that no bowing effect in the absorption edge is observed, unlike other II-VI semiconductor alloys.

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