scholarly journals Effects of oxide isolation layer on magnetic properties of L10 FePt film grown on Si substrate

2018 ◽  
Vol 67 (15) ◽  
pp. 157501
Author(s):  
Li Dan ◽  
Li Guo-Qing
2017 ◽  
Vol 422 ◽  
pp. 262-270 ◽  
Author(s):  
Jai-Lin Tsai ◽  
Jie-Lin Tzeng ◽  
Keng-Chun Hu ◽  
Hsu-Kang Li ◽  
Zu-Yu Pan ◽  
...  

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 238 ◽  
Author(s):  
Jai-Lin Tsai ◽  
Cheng Dai ◽  
Jyun-you Chen ◽  
Ting-Wei Hsu ◽  
Shi-Min Weng ◽  
...  

The FePt film above 10 nm critical lattice relaxation thickness was prepared and the ultrathin MgTiTaON layer was interleaved in between FePt film and the multilayer stack is FePt(6 nm)/[MgTiTaON(1 nm)/FePt(4 nm)]2. Next, the FePt films were co-sputtered with (Ag, C) segregants during deposition and the layer stacks is FePt(6 nm)(Ag, C)(x vol %)/[MgTiTaON (1 nm)/FePt(4 nm)(Ag, C) (x vol %)]2 (x = 0, 10, 20, 30, 40). After high temperature deposition at 470 °C, the granular FePt(Ag, C, MgTiTaON) film illustrated perpendicular magnetization and the out-of-plane coercivity (Hc) was increased with (Ag, C) segregants and the highest Hc is 18.3 kOe when x = 40. From cross-section images, the FePt layer are more continuous with 0 and 10 vol% (Ag, C) segregants and changed to an island structure when the (Ag, C) segregants increase to 20–40 vol %. The FePt grains were grown in separated islands in 20, 30 vol % (Ag, C) and changed to dense columnar-like morphology in 40 vol%. The second nucleated grains which contribute the in-plane magnetization are found in FePt (Ag, C) (40 vol %) film. The FePt islands are reached by inserting the ultrathin MgTiTaON layer and the island heights of FePt(Ag, C) (30, 40 vol %) are around 31–38 nm and the aspect ratios are 0.6–0.8.


2004 ◽  
Vol 412-414 ◽  
pp. 201-205 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny

2005 ◽  
Vol 40 (16) ◽  
pp. 4169-4172 ◽  
Author(s):  
Nimai Chand Pramanik ◽  
Tatsuo FujiI ◽  
Makoto Nakanishi ◽  
Jun Takada

2013 ◽  
Vol 337-338 ◽  
pp. 38-45 ◽  
Author(s):  
Parmanand Sharma ◽  
Neelam Kaushik ◽  
Masayoshi Esashi ◽  
Masahiko Nishijima ◽  
Akihiro Makino

2009 ◽  
Vol 105 (7) ◽  
pp. 07B724 ◽  
Author(s):  
J. S. Chen ◽  
J. F. Hu ◽  
B. C. Lim ◽  
W. L. Phyoe ◽  
B. Liu ◽  
...  

2009 ◽  
Vol 321 (17) ◽  
pp. 2627-2629 ◽  
Author(s):  
H. Wang ◽  
F.J. Yang ◽  
Q. Mo ◽  
J. Zhang ◽  
H.B. Wang ◽  
...  

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