scholarly journals Wettability and morphology of liquid gallium on graphene surface

2018 ◽  
Vol 67 (14) ◽  
pp. 149601
Author(s):  
Wang Jun-Jun ◽  
Li Tao ◽  
Li Xiong-Ying ◽  
Li Hui
Molecules ◽  
2018 ◽  
Vol 23 (10) ◽  
pp. 2407 ◽  
Author(s):  
Junjun Wang ◽  
Tao Li ◽  
Yifan Li ◽  
Yunrui Duan ◽  
Yanyan Jiang ◽  
...  

Molecular dynamics (MD) simulation has been employed to study the wetting transitions of liquid gallium droplet on the graphene surfaces, which are decorated with three types of carbon nanopillars, and to explore the effect of the surface roughness and morphology on the wettability of liquid Ga. The simulation results showed that, at the beginning, the Ga film looks like an upside-down dish on the rough surface, different from that on the smooth graphene surface, and its size is crucial to the final state of liquid. Ga droplets exhibit a Cassie–Baxter (CB) state, a Wenzel state, a Mixed Wetting state, and a dewetting state on the patterned surfaces by changing distribution and the morphology of nanopillars. Top morphology of nanopillars has a direct impact on the wetting transition of liquid Ga. There are three transition states for the two types of carbon nanotube (CNT) substrates and two for the carbon nanocone (CNC) one. Furthermore, we have found that the substrates show high or low adhesion to the Ga droplet with the variation of their roughness and top morphology. With the roughness decreasing, the adhesion energy of the substrate decreases. With the same roughness, the CNC/graphene surface has the lowest adhesion energy, followed by CNT/graphene and capped CNT/graphene surfaces. Our findings provide not only valid support to previous works but also reveal new theories on the wetting model of the metal droplet on the rough substrates.


2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.


Author(s):  
Jing-hua Guo ◽  
Jin-Xiang Liu ◽  
Hongbo Wang ◽  
Haiying Liu ◽  
Gang Chen

In this work, combining the first-principles calculations with kinetic Monte Carlo (KMC) simulations, we constructed an irregular carbon bridge on the graphene surface and explored the process of H migration...


2021 ◽  
Vol 868 ◽  
pp. 159128
Author(s):  
Yang Yang ◽  
Minghua Wang ◽  
Zhengyue Shi ◽  
Rubo Xiao ◽  
Xiangcheng Sun ◽  
...  

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.


2017 ◽  
Vol 19 (27) ◽  
pp. 17521-17525 ◽  
Author(s):  
Lifu Chen ◽  
Eden E. L. Tanner ◽  
Richard G. Compton

A concentration driven three-stage phase transition of large organic molecules on the graphene surface is revealed.


2011 ◽  
Vol 257 (17) ◽  
pp. 7443-7446 ◽  
Author(s):  
Shuanghong Gao ◽  
Zhaoyu Ren ◽  
Lijuan Wan ◽  
Jiming Zheng ◽  
Ping Guo ◽  
...  

2016 ◽  
Vol 3 (9) ◽  
pp. 095011 ◽  
Author(s):  
Da-Cheng Mao ◽  
Song-Ang Peng ◽  
Shao-Qing Wang ◽  
Da-Yong Zhang ◽  
Jing-Yuan Shi ◽  
...  

2014 ◽  
Vol 16 (41) ◽  
pp. 22784-22790 ◽  
Author(s):  
Jie Han ◽  
Xing Dai ◽  
Yang Gao ◽  
Yan Meng ◽  
Zhigang Wang

The strong localization of UC2 in V6-defective graphene stabilizes the system extremely and stimulates participation of semi-core orbitals in bonding.


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