scholarly journals Femtosecond laser pulse energy accumulation optimization effect on surface morphology of black silicon

2017 ◽  
Vol 66 (6) ◽  
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Chen Rui ◽  
Song Xiao-Wei ◽  
Chen Ya-Nan ◽  
Lin Jing-Quan
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In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by a GaAs photoconductive semiconductor switch (PCSS). When the GaAs PCSS was biased at 2.0 kV and triggered by a femtosecond laser pulse with a pulse energy of 97.5 J, the peak voltages of the positive and negative pulses were 1.313 kV and 1.329 kV, respectively, and the rise times were 174 ps and 164 ps, respectively. Moreover, the GaAs PCSS presents good stability. The experimental results show that GaAs PCSSs can meet the requirement of a femtosecond streak camera.


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