Femtosecond laser pulse energy transfer induced by plasma grating due to filament interaction in air

2010 ◽  
Vol 97 (7) ◽  
pp. 071108 ◽  
Author(s):  
Xuan Yang ◽  
Jian Wu ◽  
Yuqi Tong ◽  
Liang’en Ding ◽  
Zhizhan Xu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Pulse Energy ◽  
Laser Pulse Energy

scholarly journals Femtosecond laser pulse energy accumulation optimization effect on surface morphology of black silicon

2017 ◽  
Vol 66 (6) ◽  
pp. 067902
Author(s):  
Tao Hai-Yan ◽  
Chen Rui ◽  
Song Xiao-Wei ◽  
Chen Ya-Nan ◽  
Lin Jing-Quan
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Surface Morphology ◽  
Femtosecond Laser Pulse ◽  
Pulse Energy ◽  
Laser Pulse Energy ◽  
Black Silicon ◽  
Energy Accumulation

Femtosecond laser pulse energy self-stabilization

2004 ◽  
Vol 79 (8) ◽  
pp. 933-935 ◽  
Author(s):  
T. Oksenhendler ◽  
F. Legrand ◽  
M. Perdrix ◽  
O. Gobert ◽  
D. Kaplan
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Pulse Energy ◽  
Laser Pulse Energy ◽  
Self Stabilization

scholarly journals Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch

2019 ◽  
Vol 9 (2) ◽  
pp. 358
Author(s):  
Wei Shi ◽  
Lei Yang ◽  
Lei Hou ◽  
Zenan Liu ◽  
Nuo Xu ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Pulse Energy ◽  
Streak Camera ◽  
Experimental Results ◽  
Good Stability ◽  
Semiconductor Switch

In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by a GaAs photoconductive semiconductor switch (PCSS). When the GaAs PCSS was biased at 2.0 kV and triggered by a femtosecond laser pulse with a pulse energy of 97.5 J, the peak voltages of the positive and negative pulses were 1.313 kV and 1.329 kV, respectively, and the rise times were 174 ps and 164 ps, respectively. Moreover, the GaAs PCSS presents good stability. The experimental results show that GaAs PCSSs can meet the requirement of a femtosecond streak camera.

Experimental Investigation on Femtosecond Laser Ablation of Polycarbonate

2013 ◽  
Vol 652-654 ◽  
pp. 2359-2362
Author(s):  
Li Tao Qi ◽  
Jin Ping Hu
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Laser Pulse ◽  
Femtosecond Laser ◽  
Pulse Energy ◽  
Laser Pulse Energy ◽  
Morphological Changes ◽  
Femtosecond Laser Ablation ◽  
Experimental Investigations ◽  
Scanning Electron

In this paper, experimental investigations on femtosecond laser (pulse duration:164 fs, wavelength:780 nm) micromachining of polycarbonate have been carried out in air. The lateral and vertical machining precision was evaluated by scanning electron microscopy and profilometer. The morphological changes were observed by scanning electron microscopy. The ablation mechanism varied with the laser pulse energy was discussed. The diameter and depth of the ablated crated are influenced by the laser pulse energy and the number of laser pulses. The relation between the diameter and ablation depth of the crater and the key parameters of femtosecond laser is obtained. Femtosecond laser micromachining of polycarbonate have a potential application of the fabrication of polycarbonate-based devices.

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