Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations

Tang Hua-Lian;  Xu Bei-Lei;  Zhuang Yi-Qi;  Zhang Li;  Li Cong

doi:10.7498/aps.65.168502

Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations

Acta Physica Sinica ◽

10.7498/aps.65.168502 ◽

2016 ◽

Vol 65 (16) ◽

pp. 168502

Author(s):

Tang Hua-Lian ◽

Xu Bei-Lei ◽

Zhuang Yi-Qi ◽

Zhang Li ◽

Li Cong

Keyword(s):

Metal Oxide ◽

Process Variations ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Distribution Characteristic ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Micro & Nano Letters ◽

10.1049/mnl.2018.0012 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1151-1154

Author(s):

Lijie Li ◽

Chan Shan ◽

Ying Wang ◽

Xin Luo

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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A 65 nm Complementary Metal–Oxide–Semiconductor 400 ns Measurement Delay Negative-Bias-Temperature-Instability Recovery Sensor with Minimum Assist Circuit

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04de06 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DE06 ◽

Cited By ~ 2

Author(s):

Takashi Matsumoto ◽

Hiroaki Makino ◽

Kazutoshi Kobayashi ◽

Hidetoshi Onodera

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Measurement Delay

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.99154 ◽

1988 ◽

Vol 52 (16) ◽

pp. 1344-1346 ◽

Cited By ~ 15

Author(s):

D. Lu ◽

G. A. Ruggles ◽

J. J. Wortman

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Processing Conditions ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Semiconductor Structures ◽

Bias Temperature Instability

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Journal of Electronic Materials ◽

10.1007/s11664-014-2978-8 ◽

2014 ◽

Vol 43 (4) ◽

pp. 1207-1213 ◽

Cited By ~ 3

Author(s):

H. Hussin ◽

N. Soin ◽

M.F. Bukhori ◽

Y. Abdul Wahab ◽

S. Shahabuddin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Simulation Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2011 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2011-2014 ◽

Cited By ~ 2

Author(s):

Jone F. Chen ◽

Dao-Hong Yang ◽

Chih-Yung Lin ◽

Shien-Yang Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Supply Voltage ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2Stack Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1874 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1874-1878 ◽

Cited By ~ 1

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc25 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC25

Author(s):

Yandong He ◽

Gang Du ◽

Yunxiang Yang ◽

Ganggang Zhang ◽

Xing Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Forward Body Bias

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