scholarly journals Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films

2015 ◽  
Vol 64 (8) ◽  
pp. 087803
Author(s):  
Zhou Xiao-Hong ◽  
Yang Qing ◽  
Zou Jun-Tao ◽  
Liang Shu-Hua
Keyword(s):  
Growth Conditions ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
Doped Zno

scholarly journals Electrical and Photoluminescence Properties of Mo-doped ZnO Films Deposited by Spray Pyrolysis

2018 ◽  
Vol 15 (3) ◽  
pp. 218-223 ◽  
Author(s):  
T. Sreenivasulu Reddy ◽  
G. Phaneendra Reddy ◽  
K.T. Ramakrishna Reddy
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Zno Films ◽  
Vibrational Modes ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Doped Zno ◽  
Electrical Analysis ◽  
Substrate Temperatures

Spray deposited Mo-doped zinc oxide (MZO) films were grown on glass substrates at different substrate temperatures (Ts)that varied in the range of 300°C-450 °C at aconstant Mo-doping concentration of 2 at. %.XRD spectra revealed better crystallinity of films prepared atTs400 °C. FTIR spectra showed the vibrational modes related toZn–O bonding.Photoluminescence spectra of MZO films showed a peakrelated toviolet emissionsbetween 400 nm and 420 nm. Electrical analysis showed n type semiconducting nature of the films and the films grown at Ts= 400 °C hadlow resistivity and high mobility.Adetailed analysis on theeffect of substrate temperatureon photoluminescence and electrical propertiesof MZO films wasdiscussed and reported.

scholarly journals Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 204 ◽  
Author(s):  
Xingyou Chen ◽  
Zhenzhong Zhang ◽  
Yunyan Zhang ◽  
Bin Yao ◽  
Binghui Li ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Molecular Beam ◽  
Green Emission ◽  
Growth Conditions ◽  
Oxygen Radical ◽  
Zno Films ◽  
Nitrogen Doped ◽  
Hall Effect Measurements ◽  
Doped Zno ◽  
P Type

Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.

Photoluminescence properties of thin nitrogen- and phosphorus-doped ZnO films fabricated using pulsed laser deposition

Laser Physics ◽  
2011 ◽  
Vol 21 (4) ◽  
pp. 790-795 ◽  
Author(s):  
L. S. Parshina ◽  
O. A. Novodvorsky ◽  
V. Ya. Panchenko ◽  
O. D. Khramova ◽  
Ye. A. Cherebilo ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
Nitrogen And Phosphorus ◽  
Doped Zno ◽  
Phosphorus Doped

Carrier transport and photoluminescence properties of Ga-doped ZnO films grown by ion-plating and by atmospheric-pressure CVD

2013 ◽  
Vol 549 ◽  
pp. 12-17 ◽  
Author(s):  
T. Terasako ◽  
Y. Ogura ◽  
S. Fujimoto ◽  
H. Song ◽  
H. Makino ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Carrier Transport ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
Ion Plating ◽  
Doped Zno

Influence of growth conditions on the physical properties of Mn doped ZnO thin films grown by reactive magnetron sputtering

2015 ◽  
Vol 1805 ◽  
Author(s):  
Adrian Camacho-Berrios ◽  
Victor Pantojas ◽  
Wilfredo Otaño
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Rf Sputtering ◽  
Growth Conditions ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno ◽  
Mn Doped

ABSTRACTZnO thin films were deposited using the DC pulsed magnetron sputtering technique to study how composition and structure influences their magnetic properties. Low sputtering powers and high substrate temperatures were used to increase adatom mobility during deposition, resulting in increased crystallite size and reduced residual stress in the films. Another set of ZnO films were Mn-doped using a second magnetron gun and the amount of doping was changed by controlling the RF sputtering power. For these films, the crystallite size increased with the amount of Mn. The magnetic properties of these materials were counterintuitive; not intentionally doped ZnO showed the highest magnetization and magnetization decreased with increasing Mn concentration.

Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films

2004 ◽  
Vol 222 (1-4) ◽  
pp. 263-268 ◽  
Author(s):  
D.J Qiu ◽  
H.Z Wu ◽  
A.M Feng ◽  
Y.F Lao ◽  
N.B Chen ◽  
...  
Keyword(s):  
Zno Films ◽  
Photoluminescence Properties ◽  
Annealing Effects ◽  
Doped Zno
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