Structural and photoluminescence properties of Al-doped ZnO films deposited on Si substrate

2010 ◽  
Vol 42 (6) ◽  
pp. 1861-1864 ◽  
Author(s):  
J.J. Ding ◽  
H.X. Chen ◽  
S.Y. Ma
Keyword(s):  
Zno Films ◽  
Photoluminescence Properties ◽  
Si Substrate ◽  
Doped Zno

scholarly journals Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films

2015 ◽  
Vol 64 (8) ◽  
pp. 087803
Author(s):  
Zhou Xiao-Hong ◽  
Yang Qing ◽  
Zou Jun-Tao ◽  
Liang Shu-Hua
Keyword(s):  
Growth Conditions ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
Doped Zno

scholarly journals Electrical and Photoluminescence Properties of Mo-doped ZnO Films Deposited by Spray Pyrolysis

2018 ◽  
Vol 15 (3) ◽  
pp. 218-223 ◽  
Author(s):  
T. Sreenivasulu Reddy ◽  
G. Phaneendra Reddy ◽  
K.T. Ramakrishna Reddy
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Zno Films ◽  
Vibrational Modes ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Doped Zno ◽  
Electrical Analysis ◽  
Substrate Temperatures

Spray deposited Mo-doped zinc oxide (MZO) films were grown on glass substrates at different substrate temperatures (Ts)that varied in the range of 300°C-450 °C at aconstant Mo-doping concentration of 2 at. %.XRD spectra revealed better crystallinity of films prepared atTs400 °C. FTIR spectra showed the vibrational modes related toZn–O bonding.Photoluminescence spectra of MZO films showed a peakrelated toviolet emissionsbetween 400 nm and 420 nm. Electrical analysis showed n type semiconducting nature of the films and the films grown at Ts= 400 °C hadlow resistivity and high mobility.Adetailed analysis on theeffect of substrate temperatureon photoluminescence and electrical propertiesof MZO films wasdiscussed and reported.

Photoluminescence properties of thin nitrogen- and phosphorus-doped ZnO films fabricated using pulsed laser deposition

Laser Physics ◽  
2011 ◽  
Vol 21 (4) ◽  
pp. 790-795 ◽  
Author(s):  
L. S. Parshina ◽  
O. A. Novodvorsky ◽  
V. Ya. Panchenko ◽  
O. D. Khramova ◽  
Ye. A. Cherebilo ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
Nitrogen And Phosphorus ◽  
Doped Zno ◽  
Phosphorus Doped

Carrier transport and photoluminescence properties of Ga-doped ZnO films grown by ion-plating and by atmospheric-pressure CVD

2013 ◽  
Vol 549 ◽  
pp. 12-17 ◽  
Author(s):  
T. Terasako ◽  
Y. Ogura ◽  
S. Fujimoto ◽  
H. Song ◽  
H. Makino ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Carrier Transport ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
Ion Plating ◽  
Doped Zno

Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films

2004 ◽  
Vol 222 (1-4) ◽  
pp. 263-268 ◽  
Author(s):  
D.J Qiu ◽  
H.Z Wu ◽  
A.M Feng ◽  
Y.F Lao ◽  
N.B Chen ◽  
...  
Keyword(s):  
Zno Films ◽  
Photoluminescence Properties ◽  
Annealing Effects ◽  
Doped Zno

scholarly journals Using Different Ions in the Hydrothermal Method to Enhance the Photoluminescence Properties of Synthesized ZnO-Based Nanowires

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 446 ◽  
Author(s):  
Ya-Fen Wei ◽  
Wen-Yaw Chung ◽  
Cheng-Fu Yang ◽  
Jei-Ru Shen ◽  
Chih-Cheng Chen
Keyword(s):  
Hydrothermal Process ◽  
Zno Nanowires ◽  
Zno Films ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Surface Morphologies ◽  
The Eu

ZnO films with a thickness of ~200 nm were deposited on SiO2/Si substrates as the seed layer. Then Zn(NO3)2-6H2O and C6H12N4 containing different concentrations of Eu(NO3)2-6H2O or In(NO3)2-6H2O were used as precursors, and a hydrothermal process was used to synthesize pure ZnO as well as Eu-doped and In-doped ZnO nanowires at different synthesis temperatures. X-ray diffraction (XRD) was used to analyze the crystallization properties of the pure ZnO and the Eu-doped and In-doped ZnO nanowires, and field emission scanning electronic microscopy (FESEM) was used to analyze their surface morphologies. The important novelty in our approach is that the ZnO-based nanowires with different concentrations of Eu3+ and In3+ ions could be easily synthesized using a hydrothermal process. In addition, the effect of different concentrations of Eu3+ and In3+ ions on the physical and optical properties of ZnO-based nanowires was well investigated. FESEM observations found that the undoped ZnO nanowires could be grown at 100 °C. The third novelty is that we could synthesize the Eu-doped and In-doped ZnO nanowires at temperatures lower than 100 °C. The temperatures required to grow the Eu-doped and In-doped ZnO nanowires decreased with increasing concentrations of Eu3+ and In3+ ions. XRD patterns showed that with the addition of Eu3+ (In3+), the diffraction intensity of the (002) peak slightly increased with the concentration of Eu3+ (In3+) ions and reached a maximum at 3 (0.4) at%. We show that the concentrations of Eu3+ and In3+ ions have considerable effects on the synthesis temperatures and photoluminescence properties of Eu3+-doped and In3+-doped ZnO nanowires.

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