scholarly journals Effect of Pt NPs in the film on the performances of ZnO-based metal-semiconductor-metal structured ultraviolet photodetector

2015 ◽  
Vol 64 (6) ◽  
pp. 067802
Author(s):  
Pei Jia-Nan ◽  
Jiang Da-Yong ◽  
Tian Chun-Guang ◽  
Guo Ze-Xuan ◽  
Liu Ru-Sheng ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal

scholarly journals Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15290-15296 ◽  
Author(s):  
Xiaotong Zhang ◽  
Yu Qiu ◽  
Dechao Yang ◽  
Bing Li ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Polyester Fibre ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Schottky Structure

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

Enhanced Responsivity of ZnSe-Based Metal-Semiconductor-Metal Near-Ultraviolet Photodetector via Impact Ionization

2017 ◽  
Vol 12 (2) ◽  
pp. 1700418 ◽  
Author(s):  
Vadim P. Sirkeli ◽  
Oktay Yilmazoglu ◽  
Ahid S. Hajo ◽  
Natalia D. Nedeoglo ◽  
Dmitrii D. Nedeoglo ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ultraviolet Photodetector ◽  
Near Ultraviolet ◽  
Metal Semiconductor Metal

Current Characteristics of AlGaN/AlN Ultraviolet Photodetector with Metal-Semiconductor-Metal Structure

2013 ◽  
Vol 300-301 ◽  
pp. 1285-1288
Author(s):  
Li Zen Hsieh ◽  
Jun Yan Chang
Keyword(s):  
Reference Sample ◽  
Schottky Contact ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Current Characteristics ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure

An AlGaN/AlN ultraviolet photodetector with metal-semiconductor-metal structure is fabricated on n type 4H-SiC substrate, which is conventionally epitaxial by metal-organic chemical vapor deposition (MOCVD). The MSM structure is composed of two interdigitated fingers usually formed by Schottky contact which deposited metal with high work function metal by e-beam metallization and thermal evaporator on high resistance layers. This type of MSM has potential advantages, including ultra low dark current because of its rectifying contacts. The current Characteristics are revealed in this paper. A reference sample of AlGaN/GaN heterostructure with two-dimensional electron gas (2DEG) is also fabricated for comparision.

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