Enhanced Responsivity of ZnSe-Based Metal-Semiconductor-Metal Near-Ultraviolet Photodetector via Impact Ionization

2017 ◽  
Vol 12 (2) ◽  
pp. 1700418 ◽  
Author(s):  
Vadim P. Sirkeli ◽  
Oktay Yilmazoglu ◽  
Ahid S. Hajo ◽  
Natalia D. Nedeoglo ◽  
Dmitrii D. Nedeoglo ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ultraviolet Photodetector ◽  
Near Ultraviolet ◽  
Metal Semiconductor Metal

scholarly journals Enhanced Responsivity of ZnSe-Based Metal-Semiconductor-Metal Near-Ultraviolet Photodetector via Impact Ionization (Phys. Status Solidi RRL 2/2018)

2018 ◽  
Vol 12 (2) ◽  
pp. 1870305
Author(s):  
Vadim P. Sirkeli ◽  
Oktay Yilmazoglu ◽  
Ahid S. Hajo ◽  
Natalia D. Nedeoglo ◽  
Dmitrii D. Nedeoglo ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ultraviolet Photodetector ◽  
Near Ultraviolet ◽  
Metal Semiconductor Metal

scholarly journals Enhancing performance of Ag–ZnO–Ag UV photodetector by piezo-phototronic effect

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15290-15296 ◽  
Author(s):  
Xiaotong Zhang ◽  
Yu Qiu ◽  
Dechao Yang ◽  
Bing Li ◽  
Heqiu Zhang ◽  
...  
Keyword(s):  
Polyester Fibre ◽  
Zno Nanowires ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Schottky Structure

An ultraviolet photodetector based on a ZnO nanowires with metal–semiconductor–metal Schottky structure was fabricated on a flexible polyester fibre substrate.

scholarly journals Effect of Pt NPs in the film on the performances of ZnO-based metal-semiconductor-metal structured ultraviolet photodetector

2015 ◽  
Vol 64 (6) ◽  
pp. 067802
Author(s):  
Pei Jia-Nan ◽  
Jiang Da-Yong ◽  
Tian Chun-Guang ◽  
Guo Ze-Xuan ◽  
Liu Ru-Sheng ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

scholarly journals High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate

2016 ◽  
Author(s):  
Kuan-Ting Liu ◽  
Shoou-Jinn Chang ◽  
Sean Wu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Vapor ◽  
Metal Structure ◽  
Threading Dislocation ◽  
Ultraviolet Photodetector ◽  
Patterned Sapphire Substrate ◽  
Metal Semiconductor Metal ◽  
Shape Pattern ◽  
Threading Dislocation Density ◽  
Gan Film

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsivity as compare with those of the photodetector fabricated on conventional flat sapphire substrate. It is also found that the much larger UV-to-visible rejection ratio and the fact that responsivity drops in a smaller cut-off region are observed from photodetector fabricated by using a periodic trapezoid column-shape patterned sapphire substrate. These phenomena may all be attributed to the reduction of threading dislocation density and the improved quality of GaN film, as well as the internal reflection and/or scattering effect on the interface between GaN film and the periodic trapezoid column-shape pattern of the substrate.

scholarly journals Near-ultraviolet photodetector based on hybrid polymer/zinc oxide nanorods by low-temperature solution processes

2008 ◽  
Vol 92 (23) ◽  
pp. 233301 ◽  
Author(s):  
Yun-Yue Lin ◽  
Chun-Wei Chen ◽  
Wei-Che Yen ◽  
Wei-Fang Su ◽  
Chen-Hao Ku ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Zinc Oxide Nanorods ◽  
Ultraviolet Photodetector ◽  
Hybrid Polymer ◽  
Solution Processes ◽  
Near Ultraviolet ◽  
Oxide Nanorods ◽  
Temperature Solution
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