scholarly journals Influence of the growth conditions on the transparent conductive properties of ZnO：Al thin films grown by pulsed laser deposition

2013 ◽  
Vol 62 (21) ◽  
pp. 216102
Author(s):  
Han Jun ◽  
Zhang Peng ◽  
Gong Hai-Bo ◽  
Yang Xiao-Peng ◽  
Qiu Zhi-Wen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Conductive Properties

scholarly journals Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Colossal Magnetoresistive ◽  
Magnetic Transport

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

The Optimization of Niobium Diselenide Thin Films Through Control of Pulsed Laser Deposition Parameters

1992 ◽  
Vol 285 ◽  
Author(s):  
Allan E. Day ◽  
Samuel J.P. Laube ◽  
M.S. Donley ◽  
J.S. Zabinski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Properties ◽  
Niobium Diselenide ◽  
Deposition Parameters ◽  
And Control

ABSTRACTNiobium diselenide has potential for use as a conductive lubricant, but to achieve the optimal properties of low friction coefficient, high conductivity and oxidation resistance, the SeJNb ratio and crystallinity must be carefully controlled. It has been shown that Pulsed Laser Deposition (PLD) permits the required degree of control, even over films with complex stoichiometries. (4–8). In this study, PLD was used to grow stoichiometric, crystalline thin films of niobium diselenide and to study the effects of laser deposition parameters on film properties. Film chemistry and crystallinity were evaluated using XPS, RBS, and glancingangle XRD. Friction and wear measurements were taken on a ball-on-flat tribometer. The deposition apparatus incorporates a fully computerized data acquisition and control system that facilitated the correlation of the laser deposition parameters to film properties. This study has shown that film chemistry could be changed from substoichiometric to superstoichiometric and crystallinity varied between amorphous to highly crystalline by appropriate choice of PLD parameters. The property correlations and acquisition system that permitted the identification of the optimal growth conditions will be described.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

Structural Properties and Ionic Conductivity of Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 Thin Films Grown by Pulsed Laser Deposition

2005 ◽  
Author(s):  
Boscope M. K. Sze ◽  
C. N. Wong ◽  
K. H. Wong
Keyword(s):  
Thin Films ◽  
Ionic Conductivity ◽  
Solid Oxide Fuel Cells ◽  
Pulsed Laser Deposition ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposited Films

Thin films of Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 oxide electrolytes have been fabricated by pulsed laser deposition on (100)LaAlO3 substrates at temperature from 300 °C to 700 °C and under 100 mTorr oxygen ambient pressure. The crystal structure, crystallinity and lattice parameters of the as-deposited films are investigated by X-ray diffraction. High quality epitaxial and polycrystalline films are obtained at different growth conditions. We have made impedance measurements on these films in the temperature range from 300 °C to 850 °C. Our results reveal a mark increase in the ionic conductivity of these films in comparison with those of the corresponding bulk materials. The observed enhancements are closely related to the crystallinity of the films. Conductivities of 0.1 S/cm or higher for Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 are obtained at 500 °C. We have demonstrated that in utilizing these thin films solid oxide fuel cells operating at below 500 °C are possible.

Structure and Magnetotransport Properties of La2/3Ca1/3MnO3 Thin Films Prepared by Pulsed Laser Deposition

1998 ◽  
Vol 526 ◽  
Author(s):  
O.I. Lebedev ◽  
G. van Tendeloo ◽  
S. Amelinckx ◽  
B. Leibold ◽  
H.-U. Habermeier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Displacement Vector ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Atomic Emission ◽  
Growth Conditions ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Parameter Mismatch

AbstractLa1-xCaxMnO3-δ (LCMO) thin films are grown by pulsed laser deposition on a (100) SrTiO3 substrate at temperatures between 530°C and 890°C. The magnetotransport properties show a high negative magnetoresistance and a shift of the maximum of the R(T) curve as function of temperature. The Curie temperature changes with deposition temperature and film quality in the range of 100-220K. The film quality is characterised by X-ray diffraction and transmission electron microscopy (TEM); film and target compositions were verified by atomic emission spectroscopy. The local structure of the film depends on the growth conditions and substrate temperature. TEM reveals a slight distortion of the film leading to a breakdown of the symmetry from orthorhombic to monoclinic. At the highest growth temperatures, a well defined interface is observed within the LCMO film, parallel to the substrate surface; this interface divides the film into two lamellae with a different microstructure. The lamella close to the substrate is perfectly coherent with the substrate, suggesting that it is strained as a result of the lattice parameter mismatch; the upper lamella shows a typical domain structure with unusual translation interfaces characterised by a displacement vector of the type 1/2 [010]m and 1/2[001]m when referred to the monoclinic lattice.

Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
Matthew R. Wills ◽  
Ruth Shinar ◽  
Alan P. Constant
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
X Ray ◽  
Starting Point ◽  
Crystalline Films

AbstractPulsed laser deposition (PLD) was used to grow microcrystalline thin films of germanium (Ge) and Ge-carbon (Ge,C) alloys on fused quartz and silicon substrates at substrate temperatures 25°C ≤ Ts ≤ 325°C. The films were analyzed structurally with x-ray diffraction (XRD), optically, electrically with four-point probe measurements, and chemically with x-ray photoelectron spectroscopy (XPS). XRD results displayed a varying degree of crystallinity, with the most crystalline films obtained at Ts > 150°C. The resistivity of the Ge films decreased with increasing temperature, displaying a significant decrease for the films deposited at Ts ≥ 230°C. The growth conditions for Ge films served as a starting point for low-temperature deposition of Ge,C alloys with up to 5% C. The effects of Ts and carbon concentration on film properties are discussed.

scholarly journals Growth of LixLaySrzMnO3 thin films by pulsed laser deposition: complex relation between thin film composition and deposition parameters

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
G. Bimashofer ◽  
S. Smetaczek ◽  
E. Gilardi ◽  
C. W. Schneider ◽  
A. Limbeck ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Inductively Coupled Plasma ◽  
Mass Difference ◽  
Pulsed Laser ◽  
Large Mass ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Composition

AbstractLixLaySrzMnO3 thin films of various compositions (x,y,z) have been grown using pulsed laser deposition. The compositions of the films have been studied as a function of deposition temperature, target-to-substrate distance and deposition pressure with respect to different cation ratios of the targets by inductively coupled plasma mass spectrometry. When growing multi-elemental oxide thin films containing lithium (with its large mass difference to other elements), lithium loss is most probably inevitable. But the desired thin film composition can be achieved by selecting specific growth conditions and different target compositions. The experiments also elucidate some of the mechanisms behind the incongruent lithium transfer from the targets to thin films.

Femtosecond Pulses as a New Photonic Source for Growing Thin Films by Pulsed-laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
Eric Millon ◽  
Jacques Perrière ◽  
Olivier Albert ◽  
Jean Etchepare ◽  
Chantal Boulmer-Leborgne
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Material ◽  
Wide Band ◽  
Laser Pulses ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Time Resolved ◽  
Short Laser Pulses

AbstractThe femtosecond (fs) lasers display noticeable specificities compared with the nanosecond (ns) ones operating in the UV domain, and classically used for the pulsed-laser deposition (PLD) technique. The ultra-short laser pulses offer the feature of minimal thermal damage induced in the target material, and the very high intensities (1012-14 W/cm2) available with fs lasers are likely to allow the ablation of any kind of materials, even the wide band gap insulators.The morphology, structure, composition and properties of the films obtained by fs PLD are studied according to the experimental growth conditions, the nature of the target material, and the dynamic expansion of plasma plume. In the case of ZnO, smooth, dense and nanocrystalline films (10 to 30 nm crystallites) can be epitaxially grown on adequate substrates (i.e. sapphire). On the contrary, BaTiO3 films are formed by the random stacking of aggregates (10 to 200 nm) leading to a non negligible surface roughness,. In addition, the chemical composition of fs PLD thin films of multicomponent compound (i.e. BaTiO3) is not homogeneous, an enrichment in the lighter element being observed in the central part of the film. These properties are related to the phenomena taking place during the various steps of the process (laser-matter interaction, plasma formation, expansion) through time resolved emission spectroscopy and plume optical imaging measurements.

scholarly journals Influence of pulsed laser deposition growth conditions on the thermoelectric properties of Ca3Co4O9 thin films

2005 ◽  
Vol 97 (1) ◽  
pp. 013706 ◽  
Author(s):  
Hank W. Eng ◽  
W. Prellier ◽  
S. Hébert ◽  
D. Grebille ◽  
L. Méchin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition
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