scholarly journals Influence of pulsed laser deposition growth conditions on the thermoelectric properties of Ca3Co4O9 thin films

2005 ◽  
Vol 97 (1) ◽  
pp. 013706 ◽  
Author(s):  
Hank W. Eng ◽  
W. Prellier ◽  
S. Hébert ◽  
D. Grebille ◽  
L. Méchin ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition

Enhanced thermoelectric properties of n-type Bi2Te2.7Se0.3 thin films through the introduction of Pt nanoinclusions by pulsed laser deposition

Nano Energy ◽  
2014 ◽  
Vol 8 ◽  
pp. 223-230 ◽  
Author(s):  
Ting Sun ◽  
Majid Kabiri Samani ◽  
Narjes Khosravian ◽  
Kok Ming Ang ◽  
Qingyu Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Colossal Magnetoresistive ◽  
Magnetic Transport

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).

Pulsed laser deposition and thermoelectric properties of In- and Yb-doped CoSb3 skutterudite thin films

2011 ◽  
Vol 26 (15) ◽  
pp. 1836-1841 ◽  
Author(s):  
S.R. Sarath Kumar ◽  
A. Alyamani ◽  
J.W. Graff ◽  
T.M. Tritt ◽  
H.N. Alshareef
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Image Position

Abstract

scholarly journals Influence of the growth conditions on the transparent conductive properties of ZnO：Al thin films grown by pulsed laser deposition

2013 ◽  
Vol 62 (21) ◽  
pp. 216102
Author(s):  
Han Jun ◽  
Zhang Peng ◽  
Gong Hai-Bo ◽  
Yang Xiao-Peng ◽  
Qiu Zhi-Wen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Conductive Properties

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

The Optimization of Niobium Diselenide Thin Films Through Control of Pulsed Laser Deposition Parameters

1992 ◽  
Vol 285 ◽  
Author(s):  
Allan E. Day ◽  
Samuel J.P. Laube ◽  
M.S. Donley ◽  
J.S. Zabinski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Properties ◽  
Niobium Diselenide ◽  
Deposition Parameters ◽  
And Control

ABSTRACTNiobium diselenide has potential for use as a conductive lubricant, but to achieve the optimal properties of low friction coefficient, high conductivity and oxidation resistance, the SeJNb ratio and crystallinity must be carefully controlled. It has been shown that Pulsed Laser Deposition (PLD) permits the required degree of control, even over films with complex stoichiometries. (4–8). In this study, PLD was used to grow stoichiometric, crystalline thin films of niobium diselenide and to study the effects of laser deposition parameters on film properties. Film chemistry and crystallinity were evaluated using XPS, RBS, and glancingangle XRD. Friction and wear measurements were taken on a ball-on-flat tribometer. The deposition apparatus incorporates a fully computerized data acquisition and control system that facilitated the correlation of the laser deposition parameters to film properties. This study has shown that film chemistry could be changed from substoichiometric to superstoichiometric and crystallinity varied between amorphous to highly crystalline by appropriate choice of PLD parameters. The property correlations and acquisition system that permitted the identification of the optimal growth conditions will be described.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

Structural Properties and Ionic Conductivity of Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 Thin Films Grown by Pulsed Laser Deposition

2005 ◽  
Author(s):  
Boscope M. K. Sze ◽  
C. N. Wong ◽  
K. H. Wong
Keyword(s):  
Thin Films ◽  
Ionic Conductivity ◽  
Solid Oxide Fuel Cells ◽  
Pulsed Laser Deposition ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Deposited Films

Thin films of Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 oxide electrolytes have been fabricated by pulsed laser deposition on (100)LaAlO3 substrates at temperature from 300 °C to 700 °C and under 100 mTorr oxygen ambient pressure. The crystal structure, crystallinity and lattice parameters of the as-deposited films are investigated by X-ray diffraction. High quality epitaxial and polycrystalline films are obtained at different growth conditions. We have made impedance measurements on these films in the temperature range from 300 °C to 850 °C. Our results reveal a mark increase in the ionic conductivity of these films in comparison with those of the corresponding bulk materials. The observed enhancements are closely related to the crystallinity of the films. Conductivities of 0.1 S/cm or higher for Ce0.8Gd0.2O2 and Ce0.8Sm0.2O2 are obtained at 500 °C. We have demonstrated that in utilizing these thin films solid oxide fuel cells operating at below 500 °C are possible.

Thermoelectric Properties of Bi2Te3-Based Thin Films with Fine Grains Fabricated by Pulsed Laser Deposition

2009 ◽  
Vol 48 (8) ◽  
pp. 085506 ◽  
Author(s):  
Haruhiko Obara ◽  
Shun Higomo ◽  
Michihiro Ohta ◽  
Atsushi Yamamoto ◽  
Kazuo Ueno ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition
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