scholarly journals Influence of applied magnetic field on properties of silicon nitride thin film with light trapping structure prepared by R.F. magnetron sputtering

2013 ◽  
Vol 62 (11) ◽  
pp. 118103
Author(s):  
Jiang Qiang ◽  
Mao Xiu-Juan ◽  
Zhou Xi-Ying ◽  
Chang Wen-Long ◽  
Shao Jia-Jia ◽  
...  
2020 ◽  
Vol 495 ◽  
pp. 165872 ◽  
Author(s):  
Lin-Lin Yang ◽  
Chunhuan Chen ◽  
Jie Yuan ◽  
Li-Yin Gao ◽  
Zhengang Shang ◽  
...  

2010 ◽  
Vol 107 (1) ◽  
pp. 013902 ◽  
Author(s):  
Jae-Yeap Lee ◽  
Hu-Jong Lee ◽  
Myung-Hwa Jung ◽  
Sung-Ik Lee ◽  
Eun-Mi Choi ◽  
...  

2010 ◽  
Vol 445 ◽  
pp. 148-151 ◽  
Author(s):  
Teppei Hayashi ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

Thin films of mixtures of molybdenum silicate (MoSi2) and silicon (Si) (MoSiX, where the Mo to Si molar ratio = 1:X) were deposited on silicon nitride (Si3N4) polycrystalline substrates by radio-frequency magnetron sputtering using a target made of a mixture of MoSi2 and Si powders. The crystal structure of MoSiX thin films deposited on the Si3N4 substrate consisted of a mixture of a hexagonal phase and an unknown phase when X > 2.05. A thin film consisting almost entirely of the unknown phase could be deposited when X = 2.1−2.15. Molybdenum silicate can exist in the forms Mo3Si, Mo5Si3, or MoSi2, but to date there has been no report of molybdenum silicate having a Si to Mo molar composition ratio of larger than 2. It was found that the surfaces of thin films of the hexagonal phase or the unknown phase were readily oxidized, whereas the surfaces of thin films of a mixture of the hexagonal phase and the unknown phase exhibit excellent oxidation resistance in air at temperatures up to 700 °C.


2005 ◽  
Vol 888 ◽  
Author(s):  
Teiko Okazaki ◽  
Norimasa Okanisi ◽  
Yuki Miura ◽  
Munemi Michigami ◽  
Yasubumi Furuya ◽  
...  

ABSTRACTGiant magnetostrictive Fe-Pd and Fe-Ga thin films are expected as actuator/ sensor materials with high respective velocity and huge stress created by the magnetostriction. In order to develop magnetostrictive material induced by low magnetic field, we investigated bimorph-type magnetostrictive (positive magnetostriction / substrate / negative magnetostriction) thin films, that is, Fe-Pd(1, 3µm) or Fe-Ga(1, 3µm)/substlate /Ni(1, 3µm) by magnetron sputtering system. The substrate is Al(50µm) or kapton foil (125µm). Displacement of a upper part of these films was measured using an optical lever method. The displacement of the Fe70-Pd30(3µm )/ Al(50µm)/Ni(3µm)film ( length is 20 mm) was 280 μm under low DC magnetic field of 500 Oe and exhibits little hysteresis. These magnetostrictive properties are maintained under low alternating magnetic field. Moreover, the displacement of the film at the resonance frequency exhibits a peak and reached to 1.4 mm. The bimorph-type magnetostrictive thin film is useful for application in micro device as micro-pomp.


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