scholarly journals Magnetic instability of MgB2 thin film triggered by the various sweeping rates of an applied magnetic field

2010 ◽  
Vol 107 (1) ◽  
pp. 013902 ◽  
Author(s):  
Jae-Yeap Lee ◽  
Hu-Jong Lee ◽  
Myung-Hwa Jung ◽  
Sung-Ik Lee ◽  
Eun-Mi Choi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Applied Magnetic Field ◽  
Magnetic Instability ◽  
Mgb2 Thin Film

scholarly journals Effect of applied magnetic field on the electroplating and magnetic properties of amorphous FeNiPGd thin film

2020 ◽  
Vol 495 ◽  
pp. 165872 ◽  
Author(s):  
Lin-Lin Yang ◽  
Chunhuan Chen ◽  
Jie Yuan ◽  
Li-Yin Gao ◽  
Zhengang Shang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Magnetic Properties ◽  
Applied Magnetic Field

EFFECT OF AN APPLIED MAGNETIC FIELD AND GRAVITY MODULATION ON THE TIME DEPENDENT HYDRO-MAGNETIC INSTABILITY

2021 ◽  
Vol 10 (1) ◽  
pp. 391-401
Author(s):  
T. N. Vishalakshi ◽  
G. Chandra Shekara
Keyword(s):  
Magnetic Field ◽  
Applied Magnetic Field ◽  
Fluid Layer ◽  
Time Dependent ◽  
Gravity Modulation ◽  
Magnetic Instability ◽  
Long Run ◽  
Time Variations ◽  
Short Time ◽  
The Magnetic Field

In this present study a linear hydro-magnetic instability of time-dependent convection is designed and analyzed by using extended Stuart-Davis technique. The time variations are applied by fluctuating the fluid layer in the direction perpendicular to the flow and also the gravity modulation is introduced as sine and exponential function of time is considered to be one of the important effect. The extended Stuart-Davis technique is applied in tackling the time-dependency. To understand the effect of applied magnetic field and gravity modulation on the convection is analyzed with respect to different values of Chandrasekhar's number. The results shows that the magnetic field is having stabilizing impact in case of sinusoidal variation gravity field on the contrast it as destabilizing impact in case of exponential variation of gravity for short time but in long run it is having stabilizing effect.

Anisotropy in MgB2 thin film studied by magnetic field dependent complex microwave conductivity

2004 ◽  
Vol 408-410 ◽  
pp. 662-663 ◽  
Author(s):  
A. Dulčić ◽  
M. Požek ◽  
D. Paar ◽  
E.-M. Choi ◽  
H.-J. Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Microwave Conductivity ◽  
Mgb2 Thin Film ◽  
Field Dependent

scholarly journals Influence of applied magnetic field on properties of silicon nitride thin film with light trapping structure prepared by R.F. magnetron sputtering

2013 ◽  
Vol 62 (11) ◽  
pp. 118103
Author(s):  
Jiang Qiang ◽  
Mao Xiu-Juan ◽  
Zhou Xi-Ying ◽  
Chang Wen-Long ◽  
Shao Jia-Jia ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Applied Magnetic Field ◽  
Light Trapping

Effect of Domain Structure on the Magnetoresistance of Epitaxial Thin Films of Ferromagnetic Metallic Oxide SrRuO3

1997 ◽  
Vol 494 ◽  
Author(s):  
R. A. Rao ◽  
D. B. Kacedon ◽  
C. B. Eom
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Films ◽  
Domain Structure ◽  
Applied Magnetic Field ◽  
Spin Fluctuations ◽  
Negative Magnetoresistance ◽  
Epitaxial Thin Films ◽  
Metallic Oxide ◽  
Domain Structures

ABSTRACTWe have grown epitaxial ferromagnetic metallic oxide SrRuO3 thin films with different domain structures on (001) LaAlO3 and miscut (001) SrTiO3 substrates. The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO3 thin films has been studied. Magnetization measurements on the single domain film on 2° miscut (001) SrTiO3 substrate showed that the in-plane [110] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropie magnetoresistance (AMR) effect of ∼ 8% in magnitude. In contrast, the SrRuO3 thin film on (001) LaAlO3 substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects (-10%) were observed when the current and the applied magnetic field are parallel. The magnetoresistance behavior is explained in terms of suppression of spin fluctuations near Tc and the AMR effect.

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