scholarly journals Optimization of the longitudinal structure of intrinsic layer in microcrystalline silicon germanium solar cell

2013 ◽  
Vol 62 (3) ◽  
pp. 036102
Author(s):  
Cao Yu ◽  
Zhang Jian-Jun ◽  
Li Tian-Wei ◽  
Huang Zhen-Hua ◽  
Ma Jun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Germanium ◽  
Microcrystalline Silicon ◽  
Longitudinal Structure

Influence of alloy composition on carrier transport and solar cell properties of hydrogenated microcrystalline silicon-germanium thin films

2006 ◽  
Vol 89 (14) ◽  
pp. 142115 ◽  
Author(s):  
Takuya Matsui ◽  
Michio Kondo ◽  
Keisuke Ogata ◽  
Tsuyoshi Ozawa ◽  
Masao Isomura
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Carrier Transport ◽  
Alloy Composition ◽  
Microcrystalline Silicon

High-Efficiency Microcrystalline Silicon and Microcrystalline Silicon-Germanium Alloy Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Takuya Matsui ◽  
Michio Kondo
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Cell Parameters ◽  
Germanium Alloy ◽  
Doping Technique ◽  
Material Studies

ABSTRACTThis paper presents our material studies on hydrogenated microcrystalline silicon (μc-Si:H) and microcrystalline silicon-germanium alloy (μc-Si1-xGex:H) thin films for the development of high efficiency p-i-n junction solar cells. In μc-Si:H solar cells, we have evaluated the structural properties of the intrinsic μc-Si:H layers grown by plasma-enhanced chemical vapor deposition at high deposition rates (>2 nm/s). Several design criteria for the device grade μc-Si:H are proposed in terms of crystallographic orientation, grain size and grain boundary passivation. Meanwhile, in μc-Si1-xGex:H solar cells, we have succeeded in boosting the infrared response of solar cell upon Ge incorporation up to x∼0.2. Nevertheless, a degradation of solar cell parameters is observed for large Ge contents (x>0.2) and thick i-layers (> 1 μm), which is attributed to the influence of the Ge dangling bonds that act as acceptorlike states in undoped μc-Si1-xGex:H. To improve the device performance, we introduce an oxygen doping technique to compensate the native defect acceptors in μc-Si1-xGex:H p-i-n solar cells.

Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell

2013 ◽  
Vol 114 ◽  
pp. 161-164 ◽  
Author(s):  
Yu Cao ◽  
Jianjun Zhang ◽  
Chao Li ◽  
Tianwei Li ◽  
Zhenhua Huang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Silicon Germanium ◽  
Microcrystalline Silicon ◽  
Junction Solar Cell

Hydrogenated Microcrystalline Silicon Single-Junction and Multi-Junction Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Baojie Yan ◽  
Guozhen Yue ◽  
Jeffrey Yang ◽  
Arindam Banerjee ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Glow Discharge ◽  
Silicon Germanium ◽  
Active Area ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogenated Silicon ◽  
Area Efficiency ◽  
Bottom Cell

AbstractThis paper summarizes our recent studies of hydrogenated microcrystalline silicon (μc-Si:H) solar cells as a potential substitute for hydrogenated silicon germanium alloy (a-SiGe:H) bottom cells in multi-junction structures. Conventional radio frequency (RF) glow discharge is used to deposit hydrogenated amorphous silicon (a-Si:H) and μc-Si:H at low rates (∼ 1 Å/s), searching for the highest efficiency. We have achieved an initial active-area efficiency of 13.0% and stable efficiency of 11.2% using an a-Si:H/μc-Si:H double-junction structure. Modified very high frequency (MVHF) glow discharge is used to deposit a-Si:H and μc-Si:H at high rates (∼ 3-10 Å/s) for comparison with our a-Si:H/a-SiGe:H/a-SiGe:H triple-junction production technology. The deposition time for the μc-Si:H intrinsic (i) layer in the bottom cell should be less than 30 minutes in order to be acceptable for mass production. To date, an initial active-area efficiency of 12.3% has been achieved with the bottom cell deposited in 50 minutes. By increasing the deposition rate and reducing the bottom cell thickness, we have achieved an initial active-area efficiency of 11.4% with the bottom cellilayer deposited in 30 minutes. The cell stabilized to 10.4% after prolonged light soaking. We will address issues related to μc-Si:H material, solar cell design, solar cell analysis, and stability.

High-Performance, Tandem-Type Amorphous Silicon Solar Cell

2007 ◽  
Vol 989 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Nirut Pingate ◽  
Channarong Piromjit
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Performance ◽  
Silicon Solar Cell ◽  
Silicon Oxide ◽  
Microcrystalline Silicon ◽  
Cell Efficiency ◽  
Amorphous Silicon Solar Cell ◽  
Amorphous Silicon Oxide

AbstractMicrocrystalline silicon oxide (μc-SiO) deposited from the gas mixture of silane and carbondioxide using VHF plasma was reported by authors to be the promising material for thin-film silicon solar cell fabricated on glass substrate, comparing with the conventional amorphous silicon oxide or microcrystalline silicon p-layer. High-performance, tandem-type solar cell with amorphous and microcrystalline cells (double cells) has been achieved by ap-plying this μc-SiO to the p-layer of both cells.Further work has been extended to a-Si tandem type solar cell with triple cell configu-ration using amorphous silicon oxide (a-SiO), amorphous silicon germanium (a-SiGe) and microcrystalline Si (μc-Si) as the top, middle and bottom cells, respectively. Up to now, cell efficiency of 15.7 % has been achieved using this novel μc-SiO.

Development of Stable a-Si/a-SiGe Tandem Solar Cell Submodules Deposited by a Very High Hydrogen Dilution at Low Temperature

1998 ◽  
Vol 507 ◽  
Author(s):  
Masaki Shima ◽  
Masao Isomura ◽  
Eiji Maruyama ◽  
Shingo Okamoto ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Structural Variations ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Hydrogen Radicals ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High

ABSTRACTThe world's highest stabilized efficiency of 9.5% (light-soaked and measured by the Japan Quality Assurance Organization (JQA)) for an a-Si/a-SiGe superstrate-type solar cell submodule (area: 1200 cm2) has been achieved. This value was obtained by investigating the effects of very-high hydrogen dilution of up to 54:1 (= H2: SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) deposition at a low substrate temperature (Ts). It was found that deterioration of the film properties of a-SiGe:H when Ts decreases under low hydrogen dilution conditions can be suppressed by the high hydrogen dilution. This finding probably indicates that the energy provided by hydrogen radicals substitutes for the lost energy caused by the decrease in Ts and that sufficient surface reactions can occur. In addition, results from an estimation of the hydrogen and germanium contents of a-SiGe:H suggest the occurrence of some kinds of structural variations by the high hydrogen dilution. A guideline for optimization of a-SiGe:H films for solar cells can be presented on the basis of the experimental results. The possibility of a-SiGe:H as a narrow gap material for a-Si stacked solar cells in contrast with microcrystalline silicon (μ c-Si:H) will also be discussed from various standpoints. At present, a-SiGe:H is considered to have an advantage over μ1 c-Si:H.

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