Influence of alloy composition on carrier transport and solar cell properties of hydrogenated microcrystalline silicon-germanium thin films

2006 ◽  
Vol 89 (14) ◽  
pp. 142115 ◽  
Author(s):  
Takuya Matsui ◽  
Michio Kondo ◽  
Keisuke Ogata ◽  
Tsuyoshi Ozawa ◽  
Masao Isomura
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Carrier Transport ◽  
Alloy Composition ◽  
Microcrystalline Silicon

Improving carrier transport in strontium-doped cuprous oxide thin films prepared by Nebulizer spray pyrolysis for solar cell applications

2019 ◽  
Vol 94 (10) ◽  
pp. 1527-1535 ◽  
Author(s):  
S. Santhosh Kumar Jacob ◽  
I. Kulandaisamy ◽  
S. Valanarasu ◽  
A. M. S. Arulanantham ◽  
V. Ganesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Cuprous Oxide ◽  
Carrier Transport ◽  
Oxide Thin Films ◽  
Nebulizer Spray Pyrolysis ◽  
Nebulizer Spray

High-Efficiency Microcrystalline Silicon and Microcrystalline Silicon-Germanium Alloy Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Takuya Matsui ◽  
Michio Kondo
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Cell Parameters ◽  
Germanium Alloy ◽  
Doping Technique ◽  
Material Studies

ABSTRACTThis paper presents our material studies on hydrogenated microcrystalline silicon (μc-Si:H) and microcrystalline silicon-germanium alloy (μc-Si1-xGex:H) thin films for the development of high efficiency p-i-n junction solar cells. In μc-Si:H solar cells, we have evaluated the structural properties of the intrinsic μc-Si:H layers grown by plasma-enhanced chemical vapor deposition at high deposition rates (>2 nm/s). Several design criteria for the device grade μc-Si:H are proposed in terms of crystallographic orientation, grain size and grain boundary passivation. Meanwhile, in μc-Si1-xGex:H solar cells, we have succeeded in boosting the infrared response of solar cell upon Ge incorporation up to x∼0.2. Nevertheless, a degradation of solar cell parameters is observed for large Ge contents (x>0.2) and thick i-layers (> 1 μm), which is attributed to the influence of the Ge dangling bonds that act as acceptorlike states in undoped μc-Si1-xGex:H. To improve the device performance, we introduce an oxygen doping technique to compensate the native defect acceptors in μc-Si1-xGex:H p-i-n solar cells.

Hydrogenated microcrystalline silicon germanium as bottom sub-cell absorber for triple junction solar cell

2013 ◽  
Vol 114 ◽  
pp. 161-164 ◽  
Author(s):  
Yu Cao ◽  
Jianjun Zhang ◽  
Chao Li ◽  
Tianwei Li ◽  
Zhenhua Huang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Silicon Germanium ◽  
Microcrystalline Silicon ◽  
Junction Solar Cell

scholarly journals Optimization of the longitudinal structure of intrinsic layer in microcrystalline silicon germanium solar cell

2013 ◽  
Vol 62 (3) ◽  
pp. 036102
Author(s):  
Cao Yu ◽  
Zhang Jian-Jun ◽  
Li Tian-Wei ◽  
Huang Zhen-Hua ◽  
Ma Jun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Germanium ◽  
Microcrystalline Silicon ◽  
Longitudinal Structure

Development of the Very thin Microcrystalline N-Layer and its Application to the Stacked Solar Cell

1989 ◽  
Vol 164 ◽  
Author(s):  
F. Nakabeppu ◽  
T. Ishimura ◽  
K. Kumagai ◽  
K. Fukui
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Light Absorption ◽  
Preparation Method ◽  
Conductivity Measurement ◽  
Absorption Loss ◽  
Microcrystalline Silicon ◽  
Ar Gas

AbstractIn order to improve the efficiency of the amorphous silicon stacked solar cells, we have developed the preparation method of highly conductive very thin microcrystalline silicon n-layers. We have found that the addition of a small amount of Ar gas to deposition gases is effective to make microcrystallite size small. The obtained thin films were characterized by conductivity measurement, R-HEED observation and TEM observation.This newly developed thin microcrystalline n-layers have been applied to the stacked solar cells. Increase of Jsc by 5-6% has been achieved because of the reduction of light absorption loss in n-layer without decrease of Voc and FF.

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