scholarly journals Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer

2012 ◽  
Vol 61 (23) ◽  
pp. 236102
Author(s):  
Ji Chuan ◽  
Xu Jin
Keyword(s):  
Point Defects ◽  
Czochralski Silicon ◽  
Copper Precipitation ◽  
Boron Doped

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

2003 ◽  
Vol 83 (15) ◽  
pp. 3048-3050 ◽  
Author(s):  
Zhenqiang Xi ◽  
Deren Yang ◽  
Jin Xu ◽  
Yujie Ji ◽  
Duanlin Que ◽  
...  
Keyword(s):  
Point Defects ◽  
Large Diameter ◽  
Czochralski Silicon ◽  
Intrinsic Point Defects ◽  
Copper Precipitation

Copper precipitation in nitrogen-doped Czochralski silicon

2008 ◽  
Vol 104 (1) ◽  
pp. 013508 ◽  
Author(s):  
Weiyan Wang ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Copper Precipitation

Semi-Insulating Silicon for Microwave Devices

2009 ◽  
Vol 156-158 ◽  
pp. 101-106 ◽  
Author(s):  
Douglas M. Jordan ◽  
Kanad Mallik ◽  
Robert J. Falster ◽  
Peter R. Wilshaw
Keyword(s):  
Room Temperature ◽  
Energy Levels ◽  
Silicon On Insulator ◽  
Microwave Devices ◽  
Insulating Material ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Microwave Applications ◽  
Soi Substrates ◽  
Phosphorus Doped

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

1999 ◽  
Vol 146 (9) ◽  
pp. 3461-3465 ◽  
Author(s):  
T. Ono ◽  
A. Romanowski ◽  
E. Asayama ◽  
H. Horie ◽  
K. Sueoka ◽  
...  
Keyword(s):  
Dislocation Generation ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Induced Dislocation ◽  
Oxide Precipitate

scholarly journals Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

2016 ◽  
Vol 92 ◽  
pp. 801-807 ◽  
Author(s):  
Hiroaki Ichikawa ◽  
Isao Takahashi ◽  
Noritaka Usami ◽  
Katsuhiko Shirasawa ◽  
Hidetaka Takato
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Effective Carrier
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