scholarly journals Effects of thermal evaporation and electron beam evaporation on two-dimensional patterned Ag nanostructure during nanosphere lithography

2011 ◽  
Vol 60 (8) ◽  
pp. 086104
Author(s):  
Luo Yin-Yan ◽  
Zhu Xian-Fang
Keyword(s):  
Electron Beam ◽  
Thermal Evaporation ◽  
Nanosphere Lithography ◽  
Electron Beam Evaporation ◽  
Two Dimensional

scholarly journals SILICON NANOWIRES FABRICATION BY PHYSICAL METHOD

2018 ◽  
Vol 54 (5A) ◽  
pp. 169
Author(s):  
Nguyen Thi Thuy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Field Emission ◽  
Silicon Nanowires ◽  
Thermal Evaporation ◽  
Physical Method ◽  
Electron Beam Evaporation ◽  
Metal Catalysts ◽  
Scanning Electron

Silicon nanowires (Si NWs) were fabricated on Si(111) surfaces by both thermal evaporation and sputtering methods. Au nanocrystals were used as the metal catalysts and they were fabricated by electron beam evaporation. The field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. The diameters of the Si NWs were measured to be about few tens of nanometer. The mechanism of the nanowires formation by these methods was also discussed.

PREPARATION OF ADHERENT MnSix FILMS

2002 ◽  
Vol 16 (07) ◽  
pp. 205-215 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Reactive Deposition ◽  
Glass Substrates ◽  
Manganese Silicide

The adhesion of manganese silicide ( MnSi x) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSi x(x~1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSi x(x~1.7) film were measured by a nano-indenter and the values are 8.8±1.0 GPa and 141±15 GPa, respectively.

Smart Windows with Different Thicknesses of V2O5 as Ion Storage Layers

2010 ◽  
Vol 663-665 ◽  
pp. 743-750 ◽  
Author(s):  
Saleh N. Alamri ◽  
Ahamed A. Joraid
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Electron Beam Evaporation ◽  
Smart Windows ◽  
Electron Transitions ◽  
Ion Storage ◽  
Variation Curve ◽  
Bleached State

Smart windows were fabricated with different thicknesses of amorphous V2O5, which acts as an ion storage layer. In these devices, V2O5 was deposited by thermal evaporation at a substrate temperature of 200 oC, and an electrochromic layer (WO3) was deposited by electron beam evaporation at a substrate temperature of 250 oC. Both layers were amorphous. V2O5 was found to exhibit direct-forbidden electron transitions, whereas the WO3 layer exhibited indirect-allowed electron transitions. An increase in the thickness of V2O5 from 78 nm to 313 nm reduced the colouration efficiency from 64 to 48 cm2/C, and the time of the transmission variation curve from the coloured state to the bleached state was increased from 82.41 s to 558 s.

Epitaxial Growth of NiSi2 and CoSi2 on Laterally Confined Silicon by Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
H.F. Hsu ◽  
J.J. Chu ◽  
L.J. Chen
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Two Dimensional ◽  
Geometrical Configuration ◽  
Lateral Confinement ◽  
Stress Levels

ABSTRACTEpitaxial growth of NiSi2 and CoSi2 on silicon inside miniature oxide openings by rapid thermal annealing has been studied. Effects of lateral confinement, including two-dimensional and linear oxide openings, as well as deposition methods on the growth of NiSi2 and CoSi2 on silicon were investigated. Vast difference found in the behaviors of the growth of epitaxy inside oxide openings between samples with the metal films deposited by electron beam evaporation and sputtering are attributed to the differences in the geometrical configuration of the films and stress levels as well as surface cleanliness.

Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates

1990 ◽  
Vol 202 ◽  
Author(s):  
T. P. Humphreys ◽  
Hyeongtag Jeon ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam ◽  
Thermal Evaporation ◽  
Three Dimensional ◽  
Electron Beam Evaporation ◽  
Tungsten Filament ◽  
Growth Modes ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTIn the present study epitaxial Ni(001) films have been grown on natural C(001) substrates (type la and Ha) and homoepitaxial C(001) films. Two deposition techniques including electron-beam evaporation of Ni in a molecular beam epitaxy (MBE) system and evaporation of Ni from a resistively heated tungsten filament have been employed. As evidenced by scanning electron microscopy (SEM), the Ni films deposited by electron-beam evaporation were found to replicate the very fine, unidirectional scratches present on the as polished C(001) substrates. Indeed, the coverage and uniformity of the deposited films would imply a two-dimensional (2-D) growth mode. In comparison, the thermal evaporation of Ni on C(001) substrates results in a highly textured and faceted surface morphology indicative of three-dimensional (3–D) nucleation and growth. Moreover, Rutherford backscattering/channeling measurements have demonstrated that the Ni(001) films deposited by electron-beam evaporation are of superior crystalline quality. Differences in the observed microstructure and apparent growth modes of the epitaxial Ni(001) films have been attributed to the presence of oxygen incorporation in those layers deposited by thermal evaporation.

Two-dimensional flux pinning in multilayered MgB2/Ni thin films prepared by electron beam evaporation

2009 ◽  
Vol 469 (15-20) ◽  
pp. 1567-1570 ◽  
Author(s):  
K. Yonekura ◽  
R. Kajita ◽  
T. Fujiyoshi ◽  
T. Sueyoshi ◽  
T. Doi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Flux Pinning ◽  
Electron Beam Evaporation ◽  
Two Dimensional

An investigation of the structure of Nb/Si composite films formed by electron beam evaporation

1985 ◽  
Vol 131 (3-4) ◽  
pp. 261-266 ◽  
Author(s):  
M. Denhoff ◽  
B. Heinrich ◽  
A.E. Curzon ◽  
S. Gygax
Keyword(s):  
Electron Beam ◽  
Composite Films ◽  
Electron Beam Evaporation

Hard and superhard TiAlBN coatings deposited by twin electron-beam evaporation

2007 ◽  
Vol 201 (13) ◽  
pp. 6078-6083 ◽  
Author(s):  
C. Rebholz ◽  
M.A. Monclus ◽  
M.A. Baker ◽  
P.H. Mayrhofer ◽  
P.N. Gibson ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation
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