scholarly journals Fabrication and properties of large area Tl2Ba2CaCu2O8 superconducting thin film on sapphire substrate

2010 ◽  
Vol 59 (7) ◽  
pp. 5035
Author(s):  
You Feng ◽  
Ji Lu ◽  
Xie Qing-Lian ◽  
Wang Zheng ◽  
Yue Hong-Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Sapphire Substrate ◽  
Large Area ◽  
Superconducting Thin Film

Fabrication of large area superconducting thin film by pulsed laser scanning

1999 ◽  
Vol 9 (2) ◽  
pp. 2355-2358
Author(s):  
Q.L. Wang ◽  
C.W. An ◽  
W.D. Song ◽  
S.S. Oh ◽  
K.S. Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Scanning ◽  
Pulsed Laser ◽  
Large Area ◽  
Superconducting Thin Film

Growth of TlBa2Ca2Cu3Oy superconducting thin film on CeO2 buffered sapphire substrate

2002 ◽  
Vol 378-381 ◽  
pp. 1283-1286 ◽  
Author(s):  
A Sundaresan ◽  
J.C Nie ◽  
M Hirai ◽  
A Crisan ◽  
S Fujiwara ◽  
...  
Keyword(s):  
Thin Film ◽  
Sapphire Substrate ◽  
Superconducting Thin Film

scholarly journals Moving Pearl Vortices in Thin-Film Superconductors

2021 ◽  
Vol 6 (1) ◽  
pp. 4
Author(s):  
Vladimir Kogan ◽  
Norio Nakagawa
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Time Dependent ◽  
Superconducting Thin Film ◽  
Self Energy ◽  
London Equation ◽  
The Magnetic Field

The magnetic field hz of a moving Pearl vortex in a superconducting thin-film in (x,y) plane is studied with the help of the time-dependent London equation. It is found that for a vortex at the origin moving in +x direction, hz(x,y) is suppressed in front of the vortex, x>0, and enhanced behind (x<0). The distribution asymmetry is proportional to the velocity and to the conductivity of normal quasiparticles. The vortex self-energy and the interaction of two moving vortices are evaluated.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Vacuum processed large area doped thin-film crystals: A new approach for high-performance organic electronics

2021 ◽  
Vol 17 ◽  
pp. 100352
Author(s):  
S.-J. Wang ◽  
M. Sawatzki ◽  
H. Kleemann ◽  
I. Lashkov ◽  
D. Wolf ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
High Performance ◽  
Large Area ◽  
New Approach

Synthesis of the superconducting thin film of HgBa2Ca2Cu3O8+δ

1996 ◽  
Vol 68 (12) ◽  
pp. 1723-1725 ◽  
Author(s):  
X. S. Wu ◽  
H. M. Shao ◽  
X. X. Yao ◽  
S. S. Jiang ◽  
D. W. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Superconducting Thin Film
Sign in / Sign up

Export Citation Format

Share Document