Fabrication of large area superconducting thin film by pulsed laser scanning

1999 ◽  
Vol 9 (2) ◽  
pp. 2355-2358
Author(s):  
Q.L. Wang ◽  
C.W. An ◽  
W.D. Song ◽  
S.S. Oh ◽  
K.S. Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Scanning ◽  
Pulsed Laser ◽  
Large Area ◽  
Superconducting Thin Film

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition

1999 ◽  
Vol 225 (1) ◽  
pp. 201-220 ◽  
Author(s):  
A. Pignolet ◽  
M. Alexe ◽  
K. M. Satyalakshmi ◽  
St. Senz ◽  
D. Hesse ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Large Area

Low Temperature Polysilicon Materials and Devices

1996 ◽  
Vol 424 ◽  
Author(s):  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
C. Reita ◽  
F. Petinot ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Pulsed Laser ◽  
Large Area ◽  
Thermal Budget ◽  
Polysilicon Films ◽  
The Way ◽  
Large Area Electronics

AbstractIn this paper, we essentially discuss the material aspects of low temperature (≤ 600 °C) polysilicon technologies. Emphasis is put on the properties of polysilicon films, depending on the way they are obtained. Solid phase crystallisation as well as pulsed laser crystallisation processes are presented in some detail, together with thin film transistor characteristics. Although not yet stabilised and despite uniformity and reproducibility problems, laser crystallisation will probably end up being the technology of choice for the manufacture of large area electronics products, because it allows the fabrication of devices exhibiting superior properties, with a reduced thermal budget.

scholarly journals Fabrication and properties of large area Tl2Ba2CaCu2O8 superconducting thin film on sapphire substrate

2010 ◽  
Vol 59 (7) ◽  
pp. 5035
Author(s):  
You Feng ◽  
Ji Lu ◽  
Xie Qing-Lian ◽  
Wang Zheng ◽  
Yue Hong-Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Sapphire Substrate ◽  
Large Area ◽  
Superconducting Thin Film

Preparation of tetragonal La–Ca–Ba–Cu–O superconducting thin film by pulsed laser deposition method

2001 ◽  
Vol 357-360 ◽  
pp. 1361-1363 ◽  
Author(s):  
C. Kasai ◽  
S. Adachi ◽  
T. Sugano ◽  
N. Inoue ◽  
Y. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Superconducting Thin Film

On- and Off-AXIS Large-Area Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
James A. Greer ◽  
M. D. Tabat
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Industrial Process ◽  
Industrial Applications ◽  
Laser Deposition ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Power Sources

AbstractOver the past few years Pulsed Laser Deposition (PLD) has become a popular technique for the deposition of a wide variety of thin films, and PLD systems are currently found in numerous industrial, government, university, and military laboratories. At present, it is estimated that well over 200 different materials have been deposited by PLD and the list keeps growing. However, even with all the interest in laser deposition the technique has not yet emerged as an industrial process. At the moment, industry still prefers standard thin film growth techniques such as magnetron and ion beam sputtering, chemical vapor deposition, and electron beam evaporation for production applications. These processes have been in use for decades and have demonstrated the ability to deposit films of most materials over large areas with excellent uniformity at reasonable cost and deposition rates. Furthermore, an entire infrastructure has been built up to support these processes including standardization of deposition rate monitors, power sources, target and crucible sizes, etc. On the other hand, laser-deposition is still an emerging technology, and relatively little infrastructure exists to adequately support either research or industrial applications. Since there are several materials which are difficult if not impossible to grow in thin-film form by more conventional techniques, it is expected that as pulsed laser-deposition matures this unique process will take its rightful place on the manufacturing line.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Sign in / Sign up

Export Citation Format

Share Document