scholarly journals Determination of electron diffusion length in HgCdTe photodiodes using laser beam induced current

2009 ◽  
Vol 58 (11) ◽  
pp. 7884
Author(s):  
Yin Fei ◽  
Hu Wei-Da ◽  
Quan Zhi-Jue ◽  
Zhang Bo ◽  
Hu Xiao-Ning ◽  
...  
Keyword(s):  
Laser Beam ◽  
Diffusion Length ◽  
Induced Current ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
Hgcdte Photodiodes

scholarly journals Determination of the Electron Diffusion Length in Dye-Sensitized Solar Cells by Substrate Contact Patterning

2011 ◽  
Vol 115 (28) ◽  
pp. 13932-13937 ◽  
Author(s):  
Halina K. Dunn ◽  
Per-Oskar Westin ◽  
Daniel R. Staff ◽  
Laurence M. Peter ◽  
Alison B. Walker ◽  
...  
Keyword(s):  
Solar Cells ◽  
Diffusion Length ◽  
Dye Sensitized Solar Cells ◽  
Electron Diffusion ◽  
Dye Sensitized ◽  
Electron Diffusion Length ◽  
Sensitized Solar Cells

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices

2018 ◽  
Vol 123 (23) ◽  
pp. 235104 ◽  
Author(s):  
Jonathan Lee ◽  
Chris J. Fredricksen ◽  
Elena Flitsiyan ◽  
Robert E. Peale ◽  
Leonid Chernyak ◽  
...  
Keyword(s):  
Gamma Radiation ◽  
Diffusion Length ◽  
Electron Diffusion ◽  
Electron Diffusion Length ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document