scholarly journals Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

2009 ◽  
Vol 58 (1) ◽  
pp. 511
Author(s):  
Gu Wen-Ping ◽  
Hao Yue ◽  
Zhang Jin-Cheng ◽  
Wang Chong ◽  
Feng Qian ◽  
...  
Keyword(s):  
High Field ◽  
Field Stress ◽  
Gan Hemts

scholarly journals High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs

2016 ◽  
Vol 16 (3) ◽  
pp. 282-289 ◽  
Author(s):  
Jin Chen ◽  
Yevgeniy S. Puzyrev ◽  
En Xia Zhang ◽  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
...  
Keyword(s):  
High Field ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Field Stress ◽  
Gan Hemts

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

2018 ◽  
Vol 18 (3) ◽  
pp. 364-376 ◽  
Author(s):  
Rong Jiang ◽  
Xiao Shen ◽  
Jingtian Fang ◽  
Pan Wang ◽  
En Xia Zhang ◽  
...  
Keyword(s):  
High Field ◽  
Field Stress ◽  
Multiple Defects ◽  
Gan Hemts

Impact of surface traps on the breakdown voltage of passivated AlGaN/GaN HEMTs under high-field stress

2012 ◽  
Vol 7 (11) ◽  
pp. 1140-1142
Author(s):  
Ziqi Zhao ◽  
Qian Luo ◽  
Jiangfeng Du ◽  
Mohua Yang
Keyword(s):  
Breakdown Voltage ◽  
High Field ◽  
Field Stress ◽  
Gan Hemts

Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

1992 ◽  
Vol 28 (16) ◽  
pp. 1516 ◽  
Author(s):  
H. Fukuda ◽  
M. Yasuda ◽  
T. Iwabuchi
Keyword(s):  
High Field ◽  
Sio2 Film ◽  
Field Stress

Switching times variation of MOSFET devices with temperature and high-field stress

2008 ◽  
Vol 39 (5) ◽  
pp. 828-831 ◽  
Author(s):  
R. Habchi ◽  
C. Salame ◽  
R. El Bitar ◽  
P. Mialhe
Keyword(s):  
High Field ◽  
Field Stress ◽  
Switching Times
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